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Browsing publications by Professor Nick Cowern.

Newcastle AuthorsTitleYearFull text
Oras Al-Ani
Dr Jon Goss
Professor Nick Cowern
Professor Patrick Briddon
Meaad Al-Hadidi
et al.
A density functional study of iron segregation at ISFs and Sigma-5-(001) GBs in mc-Si2016
Oras Al-Ani
Dr Ahmed Sabaawi
Dr Jon Goss
Professor Nick Cowern
Professor Patrick Briddon
et al.
Investigation into efficiency-limiting defects in mc-Si solar cells2016
Professor Nick Cowern
Dr Sergei Simdyankin
Dr Jon Goss
Dr Chihak Ahn
Dr Nick Bennett
et al.
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 2015
Dr Sergei Simdyankin
Professor Nick Cowern
HELICS cell: Laser-cut grooves to create a high-efficiency, low-cost solar cell2014
Professor Nick Cowern
Dr Chihak Ahn
Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si2014
Professor Nick Cowern
Donor deactivation at high doping limit: Donor pair and impurity band model2013
Dr Chihak Ahn
Professor Nick Cowern
Enhancement of gettering in epitaxial thin-film silicon solar cells by tuning the properties of porous silicon2013
Professor Nick Cowern
Dr Sergei Simdyankin
Dr Chihak Ahn
Dr Nick Bennett
Dr Jon Goss
et al.
Extended point defects in crystalline materials: Ge and Si2013
Dr Nick Bennett
Professor Nick Cowern
Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique2012
Hariharsudan Sivaramakrishnan
Dr Chihak Ahn
Professor Nick Cowern
Gettering of transition metals by porous silicon in epitaxial silicon solar cells2012
Professor Nick Cowern
Silicon-based photovoltaic solar cells2012
Dr Chihak Ahn
Professor Nick Cowern
Anthropogenic Climate Change in the Zero-Carbon Era2011
Professor Nick Cowern
Dr Chihak Ahn
TCAD in the semiconductor industry and its advantages for solar cell manufacturing2011
Dr Chihak Ahn
Laura Brown
Professor Nick Cowern
Integrated process and device 'TCAD' for enhancement of c-Si solar cel efficiency2010
Dr Chihak Ahn
Laura Brown
Professor Nick Cowern
Process and device modelling for enhancement of silicon solar cell efficiency2010
Dr Nick Bennett
Professor Nick Cowern
Review of electrical characterisation of ultra-shallow junctions with micro four-point probes2010
Dr Nick Bennett
Dr Chihak Ahn
Professor Nick Cowern
Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers2010
Professor Nick Cowern
Dr Nick Bennett
Dr Chihak Ahn
Dr Joo Chul Yoon
Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs2010
Professor Nick Cowern
B profile alteration by annealing in reactive ambients2009
Dr Nick Bennett
Professor Nick Cowern
Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon2009
Dr Nick Bennett
Professor Nick Cowern
Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon2009
Professor Nick Cowern
Dr Nick Bennett
Dr Chihak Ahn
Dr Joo Chul Yoon
Overlayer stress effects on defect formation in Si and Ge2009
Dr Sarah Olsen
Professor Nick Cowern
Professor Anthony O'Neill
Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks2009
Dr Nick Bennett
Professor Nick Cowern
Photoacoustic spectroscopy at the nanoscale for ultra-shallow implanted silicon2009
Dr Nick Bennett
Professor Nick Cowern
Raman metrology for advanced CMOS devices - advantages and challenges2009
Dr Nick Bennett
Professor Nick Cowern
Review of electrical characterisation of ultra-shallow junctions with micro four-point probe2009
Dr Chihak Ahn
Dr Nick Bennett
Professor Nick Cowern
Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon2009
Professor Nick Cowern
Dr Chihak Ahn
Thermal emissions and climate change: Cooler options for future energy technology2009
Dr Nick Bennett
Dr Chihak Ahn
Professor Nick Cowern
Transient activation model for antimony in relaxed and strained silicon2009
Dr Nick Bennett
Professor Nick Cowern
Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?2008
Dr Nick Bennett
Professor Nick Cowern
Constraints on micro-Raman strain metrology for highly doped strained Si materials2008
Dr Nick Bennett
Professor Nick Cowern
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials2008
Dr Nick Bennett
Professor Nick Cowern
Doping of Sub-50nm SOI Layers2008
Dr Nick Bennett
Professor Nick Cowern
Enhanced n-type dopant solubility in tensile-strained Si2008
Dr Nick Bennett
Professor Nick Cowern
Impact of multiple sub-melt laser scans on the activation and diffusion of shallow boron junctions2008
Dr Nick Bennett
Professor Nick Cowern
On the analysis of the activation mechanisms of sub-melt laser anneals2008
Dr Nick Bennett
Professor Nick Cowern
On the analysis of the activation mechanisms of sub-melt laser anneals2008
Dr Nick Bennett
Professor Nick Cowern
Raman scattering studies of ultrashallow Sb implants in strained Si2008
Professor Nick Cowern
Source-drain engineering for channel-limited PMOS device performance: Advances in understanding of amorphization-based implant techniques2008
Dr Nick Bennett
Professor Nick Cowern
Structural and electrical characterisation of ion-implanted strained silicon2008
Dr Nick Bennett
Professor Nick Cowern
Structural and electrical characterisation of ion-implanted strained silicon2008
Professor Nick Cowern
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing2008
Professor Nick Cowern
Dr Nick Bennett
Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping2008
Dr Nick Bennett
Professor Nick Cowern
Shona Paul
Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon2008
Dr Nick Bennett
Professor Nick Cowern
Vacancy Engineering for Highly Activated 'Diffusionless' Boron Doping in Bulk Silicon2008
Dr Nick Bennett
Professor Nick Cowern
Antimony for NMOS ultrashallow junctions in strained Si: a superior dopant to arsenic2007
Professor Nick Cowern
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink2007
Professor Nick Cowern
Diffusion in a single crystal within a stressed environment2007
Professor Nick Cowern
Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal2007
Dr Nick Bennett
Professor Nick Cowern
Enhanced n-type dopant solubility in tensile strained Si2007
Professor Nick Cowern
Influence of F co-implantation on end-of-range defect formation in B+ implanted, ultrashallow junctions2007
Professor Nick Cowern
Intermittent diffusion and its influence on dopant profiles in semiconductors2007
Professor Nick Cowern
Ion pairing effects on substitutional impurity diffusion in silicon2007
Dr Nick Bennett
Professor Nick Cowern
Micro-Raman Study of Anomalous Dopant-Induced Behaviour in Ultra-Shallow As and Sb Doped Strained Si2007
Professor Nick Cowern
Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator2007
Professor Nick Cowern
Deactivation of ultra shallow B and BF2 profiles after non-melt laser annealing2006
Professor Nick Cowern
Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans2006
Professor Nick Cowern
Defect evolution and dopant activation anomalies in ion implanted silicon2006
Dr Biao Yang
Professor Nick Cowern
Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling2006
Professor Nick Cowern
Dr Suresh Uppal
Diffusion and activation of dopants in silicon and advanced silicon-based materials2006
Professor Nick Cowern
Diffusion and activation of ultrashallow B implants in silicon-on-insulator: end-of-range defect dissolution and the buried Si/SiO2 interface2006
Professor Nick Cowern
Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon2006
Professor Nick Cowern
Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator2006
Professor Nick Cowern
Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctions2006
Professor Nick Cowern
Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon2006
Dr Nick Bennett
Dr Gabriela Dilliway
Professor Nick Cowern
Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon2006
Professor Nick Cowern
Fluorine-vacancy complexes in ultrashallow B-implanted silicon2006
Dr Nick Bennett
Professor Nick Cowern
Highly conductive Sb-doped layers in strained silicon2006
Professor Nick Cowern
Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants2006
Professor Nick Cowern
Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator2006
Dr Nick Bennett
Professor Nick Cowern
Strain-Enhanced Activation of Sb Ultrashallow Junctions2006
Professor Nick Cowern
Suppression of phosphorus diffusion by carbon co-doping2006
Dr Nick Bennett
Professor Nick Cowern
Ultra-shallow junctions in silicon via low thermal budget processing2006
Professor Nick Cowern
Vacancy engineering for ultra-shallow junction formation2006
Professor Nick Cowern
Vacancy-engineering implants for high boron activation in silicon-on-insulator material2006
Professor Nick Cowern
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon2005
Professor Nick Cowern
Boron diffusion in strained and strain-relaxed SiGe2005
Professor Nick Cowern
Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si2005
Dr Nick Bennett
Professor Nick Cowern
Differential Hall profiling of ultra-shallow junctions in Si and SOI2005
Professor Nick Cowern
Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI2005
Professor Nick Cowern
Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth2005
Professor Nick Cowern
Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth2005
Dr Nick Bennett
Professor Nick Cowern
Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants2005
Professor Nick Cowern
Mechanisms of B deactivation control by F co-implantation2005
Dr Shibin Liu
Professor Nick Cowern
Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe2005
Professor Nick Cowern
Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)2005
Professor Nick Cowern
Suppression of boron interstitial clusters in SOI using vacancy engineering2005
Dr Gabriela Dilliway
Professor Nick Cowern
Transient enhanced diffusion and deactivation of ion-implanted As in strained Si2005
Professor Nick Cowern
Transient enhanced diffusion of B at low temperatures under extrinsic conditions2005
Professor Nick Cowern
Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ2005
Professor Nick Cowern
Understanding, Modeling and Optimizing Vacancy Engineering for Stable Highly Boron-Doped Ultrashallow Junctions2005
Professor Nick Cowern
Advanced front-end processes for the 45 nm CMOS technology node2004
Professor Nick Cowern
Boron diffusion in strained and strain-relaxed SiGe2004
Professor Nick Cowern
Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions2004
Professor Nick Cowern
Depth dependence of defect evolution and TED during annealing2004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of boron in germanium at 800–900°C2004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of ion-implanted boron and silicon in germanium2004
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of ion-implanted Boron and Silicon in Germanium2004
Professor Nick Cowern
Doping and mobility profiles in defect-engineered ultra-shallow junctions: Bulk and SOI2004
Professor Nick Cowern
Effect of oxygen on the diffusion of nitrogen implanted in silicon2004
Professor Nick Cowern
Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control2004
Professor Nick Cowern
Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions2004
Dr Gabriela Dilliway
Professor Nick Cowern
Xiao Lu
Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001)2004
Professor Nick Cowern
Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing2004
Professor Nick Cowern
Modelling of the chemical-pump effect and C clustering2004
Professor Nick Cowern
On the modeling of transient diffusion and activation of boron during post-implantation annealing2004
Professor Nick Cowern
Optimization of fluorine co-implantation for PMOS source and drain extension formation for 65nm technology node2004
Professor Nick Cowern
The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer2004
Professor Nick Cowern
The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer2004
Professor Nick Cowern
Boron uphill diffusion during ultrashallow junction formation2003
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of boron in germanium and Si1-xGex (x>50%) alloys2003
Professor Nick Cowern
Physics-based diffusion simulations for preamorphized ultrashallow junctions2003
Professor Nick Cowern
Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects2003
Dr Gabriela Dilliway
Professor Nick Cowern
Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition2003
Dr Gabriela Dilliway
Professor Nick Cowern
Structural and compositional evolution of self-assembled germanium islands on silicon (001) during high growth rate LPCVD2003
Professor Nick Cowern
Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon2003
Professor Nick Cowern
Diffusion Suppression in Silicon by Substitutional C Doping2002
Professor Nick Cowern
Issues on boron electrical activation in silicon: experiments on boron clusters and shallow junctions formation2002
Professor Nick Cowern
A reduced approach for modelling the influence of nanoclusters and {113} defects on transient enhanced diffusion2001
Dr Suresh Uppal
Professor Nick Cowern
Diffusion of ion-implanted Boron in Germanium2001
Professor Nick Cowern
Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon2001
Professor Nick Cowern
Furnace and RTA injection of point defects into CVD-grown B doped Si and SiGe2001
Professor Nick Cowern
Investigation of a novel rapid thermal processing concept using an electro-optically controlled radiation cavity2001
Dr Suresh Uppal
Professor Nick Cowern
Ion-implantation and diffusion behaviour of boron in germanium2001
Professor Nick Cowern
Ultra shallow boron base profile with carbon implantation2001
Professor Nick Cowern
Enhanced diffusion in silicon processing2000
Professor Nick Cowern
Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon2000
Professor Nick Cowern
Ultrashallow junction formation and gate activation in deep-submicron CMOS2000
Professor Nick Cowern
Boride-enhanced diffusion in silicon: Bulk and surface layers1999
Professor Nick Cowern
Cluster ripening and transient enhanced diffusion in silicon1999
Professor Nick Cowern
Energetics of self-interstitial clusters in Si1999
Professor Nick Cowern
Fundamental diffusion issues for deep submicron device scaling1999