ePrints

Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

Lookup NU author(s): Professor Nick Cowern

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Smith AJ, Cowern NEB, Colombeau B, Gwilliam R, Sealy BJ, Collart EJH, Gennaro S, Giubertoni D, Bersani M, Barozzi M

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Ion Implantation Technology Conference

Year of Conference: 2006

Share