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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD
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Fabrication and testing of 4H-SiC IMPATT diodes with p(+)-n-n(+) doping profile is described. The diodes produced a pulsed power of about 300 mW in a frequency range of (8.2-12.4 GHz). Diode microwave characteristics are analyzed and compared with known experimental and theoretical data about high field carrier transport along the c-axis in 4H-SiC.
Author(s): Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA
Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials
Year of Conference: 2002
Pages: 1353-1358
ISSN: 0255-5476
Publisher: Trans Tech Publications Ltd.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.1353
DOI: 10.4028/www.scientific.net/MSF.389-393.1353
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum
ISBN: 9780878498949
