Toggle Main Menu Toggle Search

Open Access padlockePrints

4H-SiC IMPATT diode fabrication and testing

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Fabrication and testing of 4H-SiC IMPATT diodes with p(+)-n-n(+) doping profile is described. The diodes produced a pulsed power of about 300 mW in a frequency range of (8.2-12.4 GHz). Diode microwave characteristics are analyzed and compared with known experimental and theoretical data about high field carrier transport along the c-axis in 4H-SiC.

Publication metadata

Author(s): Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA

Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Silicon Carbide and Related Materials

Year of Conference: 2002

Pages: 1353-1358

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9780878498949