Publications by Dr Konstantin Vasilevskiy - ePrints

Browsing publications by Dr Konstantin Vasilevskiy.

Newcastle Authors	Title	Year
Merve Yakut Atreyee Roy Dr Jake Sheriff Dr Sarah Olsen Dr Konstantin Vasilevskiy et al.	Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In Situ Nitridation of SiC Surface	2024
Professor Anthony O'Neill Faiz Arith Dr Jesus Urresti Ibanez Dr Konstantin Vasilevskiy Professor Nick Wright et al.	High Mobility 4H-SiC MOSFET	2018
Faiz Arith Dr Jesus Urresti Ibanez Dr Konstantin Vasilevskiy Dr Sarah Olsen Professor Nick Wright et al.	High mobility 4H-SiC MOSFET using a thin SiO₂/Al₂O₃ gate stack	2018
Faiz Arith Dr Jesus Urresti Ibanez Dr Konstantin Vasilevskiy Dr Sarah Olsen Professor Nick Wright et al.	Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO₂ / Al₂O₃ Gate Stack	2018
Dr Konstantin Vasilevskiy Sandip Roy Neal Wood Dr Alton Horsfall Professor Nick Wright et al.	On electrons mobility in heavily nitrogen doped 4H-SiC	2017
Dr Hua Khee Chan Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	4H-SiC Schottky diode arrays for X-ray detection	2016
Harbaljit Sohal Dr Konstantin Vasilevskiy Professor Andrew Jackson Professor Stuart Baker Professor Anthony O'Neill et al.	Design and Microfabrication Considerations for Reliable Flexible Intracortical Implants	2016
Dr Toby Hopf Dr Konstantin Vasilevskiy Dr Enrique Escobedo-Cousin Dr Alton Horsfall Professor Jon Goss et al.	Facile technique for the removal of metal contamination from graphene	2015
Dr Toby Hopf Dr Konstantin Vasilevskiy Enrique Escobedo-Cousin Professor Nick Wright Dr Alton Horsfall et al.	Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects	2014
Dr Toby Hopf Dr Konstantin Vasilevskiy Dr Enrique Escobedo-Cousin Dr Peter King Professor Nick Wright et al.	Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature	2014
Sandip Roy Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	Discriminating High k Dielectric gas Sensors	2014
Dr Toby Hopf Dr Konstantin Vasilevskiy Dr Enrique Escobedo-Cousin Professor Anthony O'Neill Dr Alton Horsfall et al.	Optimizing the vacuum growth of epitaxial graphene on 6H-SiC	2014
Dr Enrique Escobedo-Cousin Dr Konstantin Vasilevskiy Dr Toby Hopf Professor Nick Wright Professor Anthony O'Neill et al.	Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms	2014
Harbaljit Sohal Professor Andrew Jackson Dr Gavin Clowry Dr Konstantin Vasilevskiy Professor Anthony O'Neill et al.	The sinusoidal probe: a new approach to improve electrode longevity	2014
Dr Enrique Escobedo-Cousin Dr Konstantin Vasilevskiy Dr Toby Hopf Professor Nick Wright Professor Anthony O'Neill et al.	Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon	2013
Benjamin Furnival Sandip Roy Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall et al.	CMOS compatible gas sensor arrays for hostile environments	2012
Daniel Brennan Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator	2012
Dr Enrique Escobedo-Cousin Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Professor Anthony O'Neill et al.	Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide	2012
Daniel Brennan Dr Omid Mostaghimi Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall et al.	Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes	2012
Simon Barker Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Dr Alton Horsfall et al.	Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices	2012
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al.	3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring	2011
Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-ray Detectors	2011
Benjamin Furnival Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	Recovery of Ohmic Contacts Formed on C-face 4H-SiC Following High Temperature Post-Processing	2011
Dr Konstantin Vasilevskiy Professor Nick Wright	Semiconductor device having SiC substrate and method for manufacturing the same	2011
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright	Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts	2011
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al.	4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers	2010
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al.	6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers	2010
Harbaljit Sohal Professor Andrew Jackson Robert Jackson Dr Konstantin Vasilevskiy Dr Gavin Clowry et al.	A novel flexible sinusoidal electrode to enhance longevity of chronic neuronal recordings	2010
Daniel Brennan Bing Miao Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall et al.	Amplitude shift keyed radio communications for hostile environments	2010
Daniel Brennan Bing Miao Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall et al.	Amplitude Shift Keyed Radio Communications for Hostile Environments	2010
Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright	Free standing AlN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates	2010
Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright	Free standing AlN single crystal growth on pre-patterned and in situ patterned 4H-SiC substrates	2010
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al.	Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon	2010
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright	Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon	2010
Simon Barker Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	High Temperature Vibration Energy Harvester System	2010
Irina Nikitina Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	Method of forming an ohmic contact in wide band semiconductor	2010
Simon Barker Bing Miao Daniel Brennan Dr Konstantin Vasilevskiy Professor Nick Wright et al.	Silicon carbide based energy harvesting module for hostile environments	2010
Simon Barker Bing Miao Daniel Brennan Dr Konstantin Vasilevskiy Professor Nick Wright et al.	Silicon Carbide based Energy Harvesting Module for Hostile Environments	2010
Professor Nick Wright Dr Christopher Johnson Dr Alton Horsfall Dr Konstantin Vasilevskiy	Applications-based design of SiC technology	2009
Dr Konstantin Vasilevskiy	Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide	2009
Irina Nikitina Dr Konstantin Vasilevskiy Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al.	Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC	2009
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al.	Silicon Carbide Static Induction Transistor with Implanted Buried Gate	2009
Simon Barker Rupert Stevens Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright et al.	Silicon Carbide UV Based Photovoltaic for Hostile Environments	2009
Dr Konstantin Vasilevskiy Professor Nick Wright Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson et al.	Silicon carbide vertical JFET operating at high temperature	2009
Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Dr Christopher Johnson	Impact ionization in ion implanted 4H-SiC photodiodes	2008
Irina Nikitina Dr Konstantin Vasilevskiy Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al.	Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC	2008
Professor Nick Wright Dr Alton Horsfall Dr Konstantin Vasilevskiy	Prospects for SiC electronics and sensors	2008
Praneet Bhatnagar Professor Nick Wright Dr Alton Horsfall Dr Konstantin Vasilevskiy Dr Christopher Johnson et al.	High temperature characterisation of 4H-SiC VJFET	2007
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al.	High voltage silicon carbide schottky diodes with single zone junction termination extension	2007
Dr Konstantin Vasilevskiy Irina Nikitina Dr Gordon Phelps Dr Alton Horsfall Professor Nick Wright et al.	Potential benefits of silicon carbide zener diodes used as components of intrinsically safe barriers	2007
Dr Alton Horsfall Dr Konstantin Vasilevskiy Professor Nick Wright	Semi-transparent SiC Schottky diodes for X-ray spectroscopy	2007
Chia-Ching Chen Dr Alton Horsfall Professor Nick Wright Dr Konstantin Vasilevskiy	Temperature stability of heteropolytypic 6H/3C FETs	2007
Praneet Bhatnagar Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson Dr Konstantin Vasilevskiy et al.	Analytical modelling of I-V characteristics for 4H-SiC enhancement mode VJFET	2006
Dr Ming-Hung Weng Dr Alton Horsfall Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina et al.	Comparison of parameter extraction techniques for SiC Schottky diodes	2006
Dr Ming-Hung Weng Dr Alton Horsfall Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina et al.	Comparison of parameter extraction techniques for SiC Schottky diodes	2006
Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Dr Alton Horsfall Professor Anthony O'Neill et al.	Device processing and characterisation of high temperature silicon carbide Schottky diodes	2006
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al.	High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown	2006
Irina Nikitina Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall	Method of forming an ohmic contact in wide band semiconductor	2006
Dr Konstantin Vasilevskiy	Microwave p-i-n diodes and switches based on 4H-SiC	2006
Dr Alton Horsfall Peter Tappin Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina et al.	Optimisation of 4H-SiC MOSFET structures for logic applications	2006
Dr Konstantin Vasilevskiy	Silicon carbide diodes for microwave applications	2006
Irina Nikitina Dr Konstantin Vasilevskiy Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al.	Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing	2006
Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al.	Structural properties of titanium-nickel films on silicon carbide following high temperature annealing	2006
Dr Konstantin Vasilevskiy	4H-SiC pin diodes for microwave applications	2005
Dr Konstantin Vasilevskiy	4H-SiC PIN diodes for microwave applications	2005
Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson et al.	Aluminium implantation induced linear surface faults in 4H-SiC	2005
Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson et al.	Aluminium implantation induced linear surface faults in 4H-SiC	2005
Praneet Bhatnagar Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill Dr Konstantin Vasilevskiy et al.	Effective edge termination design in SiCVJFET	2005
Irina Nikitina Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall Professor Anthony O'Neill et al.	Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide	2005
Dr Konstantin Vasilevskiy	III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer	2005
Dr Alton Horsfall Peter Tappin Praneet Bhatnagar Professor Nick Wright Dr Konstantin Vasilevskiy et al.	Optimisation of 4H-SIC MOSFET structures for logic applications	2005
Praneet Bhatnagar Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson Dr Konstantin Vasilevskiy et al.	Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation	2005
Dr Konstantin Vasilevskiy Professor Nick Wright Irina Nikitina Dr Alton Horsfall Professor Anthony O'Neill et al.	Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing	2005
Cezar Blasciuc-Dimitriu Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson Dr Konstantin Vasilevskiy et al.	Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes	2005
Dr Konstantin Vasilevskiy	Silicon carbide diodes for microwave applications	2005
Professor Nick Wright Nipapan Poolamai Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson et al.	Benefits of high-k dielectrics in 4H-SIC trench MOSFETs	2004
Professor Nick Wright Nipapan Poolamai Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson et al.	Benefits of high-k dielectrics in 4H-SiC trench MOSFETs	2004
Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright	Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation	2004
Dr Konstantin Vasilevskiy	Experimental study of SiC p-i-n diodes in the 3-cm range	2004
Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson Dr Konstantin Vasilevskiy Professor Anthony O'Neill et al.	First principles derivation of carrier transport across metal - SiC barriers	2004
Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright	Low voltage silicon carbide zener diode	2004
Dr Konstantin Vasilevskiy	Microwave switches based on 4H-SiC p-i-n diodes	2004
Dr Konstantin Vasilevskiy	P-n heterojunction-based structures utilizing HVPE grown III-V compound layers	2004
Dr Konstantin Vasilevskiy Dr John Hedley Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright et al.	Reactive ion etching of silicon carbide with patterned boron implantation	2004
Dr Konstantin Vasilevskiy Dr John Hedley Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright et al.	Reactive ion etching of Silicon Carbide with patterned Boron implantation	2004
Dr Konstantin Vasilevskiy	Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes	2004
Cezar Blasciuc-Dimitriu Dr Alton Horsfall Dr Konstantin Vasilevskiy Dr Christopher Johnson Professor Nick Wright et al.	Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes	2003
Dr Konstantin Vasilevskiy	Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques	2003
Dr Konstantin Vasilevskiy	Method for growing p-n heterojunction-based structures utilizing HVPE techniques	2003
Dr Konstantin Vasilevskiy	Method for growing p-type III-V compound material utilizing HVPE techniques	2003
Dr Konstantin Vasilevskiy	Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide	2003
Dr Konstantin Vasilevskiy	4H-SiC IMPATT diode fabrication and testing	2002
Dr Konstantin Vasilevskiy	4H-SiC IMPATT diode fabrication and testing	2002
Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright Professor Anthony O'Neill et al.	4H-SiC rectifiers with dual metal planar Schottky contacts	2002
Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright Professor Anthony O'Neill et al.	4H-SiC Schottky diodes with high on/off current ratio	2002
Dr Konstantin Vasilevskiy Dr Alton Horsfall Dr Christopher Johnson Professor Nick Wright Professor Anthony O'Neill et al.	4H-SiC Schottky diodes with high on/off current ratio	2002
Cezar Blasciuc-Dimitriu Dr Alton Horsfall Dr Konstantin Vasilevskiy Dr Christopher Johnson Professor Nick Wright et al.	Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes	2002
Dr Gordon Phelps Professor Nick Wright Dr Graeme Chester Dr Christopher Johnson Professor Anthony O'Neill et al.	Enhanced dopant diffusion effects in 4H silicon carbide	2002
Dr Gordon Phelps Professor Nick Wright Dr Graeme Chester Dr Christopher Johnson Professor Anthony O'Neill et al.	Enhanced nitrogen diffusion in 4H-SiC	2002
Dr Konstantin Vasilevskiy	Method for growing p-n homojunction-based structures utilizing HVPE techniques	2002
Dr Konstantin Vasilevskiy	Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide	2002
Dr Alton Horsfall Dr Konstantin Vasilevskiy Dr Christopher Johnson Professor Nick Wright Professor Anthony O'Neill et al.	Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes	2002
Dr Alton Horsfall Dr Konstantin Vasilevskiy Dr Christopher Johnson Professor Nick Wright Professor Anthony O'Neill et al.	Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes	2002
Dr Konstantin Vasilevskiy	Photon emission analysis of defect-free 4H-SiC p-n diodes in the avalanche regime	2002
Dr Konstantin Vasilevskiy	Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode	2001
Dr Konstantin Vasilevskiy Irina Nikitina	Phase Formation at Rapid Thermal Annealing of Al/Ti/Ni Ohmic Contacts on 4H-SiC	2001
Dr Konstantin Vasilevskiy	Process for producing III-V nitride pn junctions and p-i-n junctions	2001
Dr Konstantin Vasilevskiy	Silicon carbide Zener diodes	2001
Dr Konstantin Vasilevskiy	X-band silicon carbide IMPATT oscillator	2001
Dr Konstantin Vasilevskiy	Experimental Determination of Electron Drift Velocity in 4H-SiC p+-n-n+ Avalanche Diodes	2000
Dr Konstantin Vasilevskiy	Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers	1999
Dr Konstantin Vasilevskiy	Study of annealing conditions on the formation of ohmic contacts on p+ 4H-SiC layers grown by CVD and LPE	1999