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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Lookup NU author(s): Professor Nick Cowern

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Author(s): Cowern NEB; Colombeau B; Cristiano F; Calvo P; Cherkashin N; Lamrani Y; Claverie A

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2003

Volume: 83

Issue: 10

Pages: 1953-1955

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1608489

DOI: 10.1063/1.1608489

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