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B profile alteration by annealing in reactive ambients

Lookup NU author(s): Professor Nick Cowern

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Abstract

Suppression or stimulation of B diffusion and activation in Si (coimplanted with F) has been investigated by anneals in a N-2 ambient enriched with H-2 or O-2. The H-2 rich ambient leads to B desorption and therefore stimulated diffusion toward the surface, thus effectively reducing indiffusion. Annealing in an O-2 rich ambient promotes deeper B diffusion by injection of Si interstitials. The impact of these ambients can further be modulated by combining the B implant with a shallow or deep F coimplant acting as Si interstitial trap. Deep F coimplant and H-2 rich ambient offer attractive B diffusion and activation.

Publication metadata

Author(s): Pawlak BJ, Cowern NEB, Vandervorst W

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2009

Volume: 94

Issue: 2

Date deposited: 24/05/2010

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.3068756

DOI: 10.1063/1.3068756

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