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Lookup NU author(s): Dr Rajat Mahapatra, Dr Alton Horsfall, Professor Nick Wright
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In this study we report interface and carrier transport behaviour in Al/HfO2/SiO2/SiC MIS structure. The density of the interface states (D-it) and the oxide trapped charges (N-ot) are found to be similar to 7 x 10(11) eV(-1) cm(-2) @ E-c-E-t = 0.2 eV, and similar to 4.8 x 10(11) cm(-2). The temperature dependencies on gate current density are explored to study the different charge transport mechanisms through the HfO2-based dielectric stack on 4H-SiC. In the low voltage region, the conduction mechanism is controlled by a space charge limited or electronic hopping conduction process. Beyond this region (1.25 MV/cm 2.5 MV/cm), and at higher temperatures Schottky emission (SE) fits the data very well. The barrier height is found to be similar to 1.5 eV, which is higher than the value for just HfO2 on SiC
Author(s): Mahapatra R, Horsfall AB, Wright NG
Editor(s): Suzuki, A; Okumura, H; Kimoto, T; Fuyuki, T; Fukuda, K; Nishizawa, S
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 12th International Conference on Silicon Carbide and Related Materials (ICSCRM 2007)
Year of Conference: 2007
Pages: 759-762
ISSN: 0255-5476
Publisher: Materials Science Forum: Trans Tech Publications Ltd
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.759
DOI: 10.4028/www.scientific.net/MSF.600-603.759
Library holdings: Search Newcastle University Library for this item
ISBN: 9780878493579
