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Lookup NU author(s): Dr Alton Horsfall,
Professor Anthony O'Neill
This is the final published version of an article that has been published in its final definitive form by American Institute of Physics, 2009.
For re-use rights please refer to the publisher's terms and conditions.
High intensity x-rays at an advanced light facility were used to probe the strained atomic spacing of Cu interconnects embedded in ultralow-k dielectrics of different porosities. The assumption that the strain-free atomic spacing of a thin film can be extrapolated from a relationship based on the material stiffness coefficients used in literature is tested and demonstrated experimentally using a series of blanket wafers. This is used to calculate the stress of 100 nm interconnects. High porosity materials show in-plane relaxation reducing the stress. The air gap architecture is shown to provide little constraint with the lowest Cu stress.
Author(s): Wilson CJ, Zhao C, Zhao L, Metzger TH, Tokei Z, Croes K, Pantouvaki M, Beyer GP, Horsfall AB, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Date deposited: 15/09/2016
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
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