Silicon Carbide Vertical JFET Operating at High Temperature

Vassilevski, K; Hilton, KP; Wright, N; Uren, M; Munday, A; Nikitina, I; Hydes, A; Horsfall, A; Johnson, CM

doi:10.4028/www.scientific.net/MSF.600-603.1063

Silicon Carbide Vertical JFET Operating at High Temperature

Lookup NU author(s): Professor Nick Wright, Irina Nikitina, Dr Alton Horsfall, Dr Christopher Johnson

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Abstract

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p(+)-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 m Omega.cm(2) measured at room temperature. These devices operated reversibly at a current density of 100 A/cm(2) whilst placed on a hot stage at temperature of 500 degrees C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 degrees C followed a power law (similar to T-2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.