Newcastle University
Toggle Main Menu
Toggle Search
Home
Browse
Latest
Policies
About
Home
Browse
Latest
Policies
About
ePrints
Browse by author
Browsing publications by
Irina Nikitina.
Newcastle Authors
Title
Year
Full text
Dr Enrique Escobedo-Cousin
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Professor Anthony O'Neill
et al.
Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
2012
Simon Barker
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Dr Alton Horsfall
et al.
Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices
2012
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
2011
Dr Venkata Nagareddy
Irina Nikitina
Professor Jon Goss
Professor Nick Wright
Dr Alton Horsfall
et al.
High temperature measurements of metal contacts on epitaxial graphene
2011
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
2011
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Free standing AlN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Free standing AlN single crystal growth on pre-patterned and in situ patterned 4H-SiC substrates
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
2010
Irina Nikitina
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Method of forming an ohmic contact in wide band semiconductor
2010
Irina Nikitina
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC
2009
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Silicon Carbide Static Induction Transistor with Implanted Buried Gate
2009
Simon Barker
Rupert Stevens
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
et al.
Silicon Carbide UV Based Photovoltaic for Hostile Environments
2009
Dr Konstantin Vasilevskiy
Professor Nick Wright
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Silicon carbide vertical JFET operating at high temperature
2009
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Dr Christopher Johnson
Impact ionization in ion implanted 4H-SiC photodiodes
2008
Irina Nikitina
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
2008
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
High voltage silicon carbide schottky diodes with single zone junction termination extension
2007
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Gordon Phelps
Dr Alton Horsfall
Professor Nick Wright
et al.
Potential benefits of silicon carbide zener diodes used as components of intrinsically safe barriers
2007
Professor Nick Wright
Dr Christopher Johnson
Irina Nikitina
Dr Alton Horsfall
Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006 (ECSCRM 2006)
2007
Professor Nick Wright
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
Silicon Carbide Vertical JFET Operating at High Temperature
2007
Dr Ming-Hung Weng
Dr Alton Horsfall
Professor Nick Wright
Irina Nikitina
Comparison of parameter extraction techniques for SiC Schottky diodes
2006
Dr Ming-Hung Weng
Dr Alton Horsfall
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
et al.
Comparison of parameter extraction techniques for SiC Schottky diodes
2006
Dr Ming-Hung Weng
Dr Alton Horsfall
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
et al.
Comparison of parameter extraction techniques for SiC Schottky diodes
2006
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Dr Alton Horsfall
Professor Anthony O'Neill
et al.
Device processing and characterisation of high temperature silicon carbide Schottky diodes
2006
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown
2006
Irina Nikitina
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Method of forming an ohmic contact in wide band semiconductor
2006
Dr Alton Horsfall
Peter Tappin
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
et al.
Optimisation of 4H-SiC MOSFET structures for logic applications
2006
Irina Nikitina
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing
2006
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
Structural properties of titanium-nickel films on silicon carbide following high temperature annealing
2006
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Aluminium implantation induced linear surface faults in 4H-SiC
2005
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Aluminium implantation induced linear surface faults in 4H-SiC
2005
Irina Nikitina
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Professor Anthony O'Neill
et al.
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide
2005
Dr Alton Horsfall
Peter Tappin
Praneet Bhatnagar
Professor Nick Wright
Dr Konstantin Vasilevskiy
et al.
Optimisation of 4H-SIC MOSFET structures for logic applications
2005
Dr Konstantin Vasilevskiy
Professor Nick Wright
Irina Nikitina
Dr Alton Horsfall
Professor Anthony O'Neill
et al.
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
2005
Irina Nikitina
Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE
2002
Irina Nikitina
Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE
2002
Irina Nikitina
Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates
2001
Irina Nikitina
Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC
2001
Irina Nikitina
Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions
2001
Dr Konstantin Vasilevskiy
Irina Nikitina
Phase Formation at Rapid Thermal Annealing of Al/Ti/Ni Ohmic Contacts on 4H-SiC
2001
Irina Nikitina
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy
2001
Irina Nikitina
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
2001
Irina Nikitina
Structural and Morphological characterisation of Al/Ti-based ohmic contacts on p-type 4H-SiC annealed under various conditions
2000
Irina Nikitina
Dislocation reduction in AlN and GaN bulk crystals grown by HVPE
1999
Irina Nikitina
Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE
1999