Dr Enrique Escobedo-Cousin Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Professor Anthony O'Neill et al. | Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide | 2012 |
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Simon Barker Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Dr Alton Horsfall et al. | Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices | 2012 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al. | 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring | 2011 |
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Dr Venkata Nagareddy Irina Nikitina Professor Jon Goss Professor Nick Wright Dr Alton Horsfall et al. | High temperature measurements of metal contacts on epitaxial graphene | 2011 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright
| Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts | 2011 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al. | 4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers | 2010 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al. | 6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers | 2010 |
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Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright
| Free standing AlN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates | 2010 |
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Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright
| Free standing AlN single crystal growth on pre-patterned and in situ patterned 4H-SiC substrates | 2010 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al. | Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon | 2010 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright
| Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon | 2010 |
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Irina Nikitina Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall
| Method of forming an ohmic contact in wide band semiconductor | 2010 |
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Irina Nikitina Dr Konstantin Vasilevskiy Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al. | Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC | 2009 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al. | Silicon Carbide Static Induction Transistor with Implanted Buried Gate | 2009 |
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Simon Barker Rupert Stevens Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright et al. | Silicon Carbide UV Based Photovoltaic for Hostile Environments | 2009 |
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Dr Konstantin Vasilevskiy Professor Nick Wright Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson et al. | Silicon carbide vertical JFET operating at high temperature | 2009 |
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Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Dr Christopher Johnson
| Impact ionization in ion implanted 4H-SiC photodiodes | 2008 |
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Irina Nikitina Dr Konstantin Vasilevskiy Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al. | Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC | 2008 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al. | High voltage silicon carbide schottky diodes with single zone junction termination extension | 2007 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Gordon Phelps Dr Alton Horsfall Professor Nick Wright et al. | Potential benefits of silicon carbide zener diodes used as components of intrinsically safe barriers | 2007 |
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Professor Nick Wright Dr Christopher Johnson Irina Nikitina Dr Alton Horsfall
| Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006 (ECSCRM 2006) | 2007 |
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Professor Nick Wright Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson
| Silicon Carbide Vertical JFET Operating at High Temperature | 2007 |
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Dr Ming-Hung Weng Dr Alton Horsfall Professor Nick Wright Irina Nikitina
| Comparison of parameter extraction techniques for SiC Schottky diodes | 2006 |
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Dr Ming-Hung Weng Dr Alton Horsfall Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina et al. | Comparison of parameter extraction techniques for SiC Schottky diodes | 2006 |
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Dr Ming-Hung Weng Dr Alton Horsfall Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina et al. | Comparison of parameter extraction techniques for SiC Schottky diodes | 2006 |
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Dr Konstantin Vasilevskiy Irina Nikitina Professor Nick Wright Dr Alton Horsfall Professor Anthony O'Neill et al. | Device processing and characterisation of high temperature silicon carbide Schottky diodes | 2006 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al. | High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown | 2006 |
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Irina Nikitina Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall
| Method of forming an ohmic contact in wide band semiconductor | 2006 |
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Dr Alton Horsfall Peter Tappin Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina et al. | Optimisation of 4H-SiC MOSFET structures for logic applications | 2006 |
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Irina Nikitina Dr Konstantin Vasilevskiy Dr Alton Horsfall Professor Nick Wright Professor Anthony O'Neill et al. | Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing | 2006 |
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Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Professor Nick Wright Dr Christopher Johnson et al. | Structural properties of titanium-nickel films on silicon carbide following high temperature annealing | 2006 |
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Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson et al. | Aluminium implantation induced linear surface faults in 4H-SiC | 2005 |
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Professor Nick Wright Dr Konstantin Vasilevskiy Irina Nikitina Dr Alton Horsfall Dr Christopher Johnson et al. | Aluminium implantation induced linear surface faults in 4H-SiC | 2005 |
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Irina Nikitina Dr Konstantin Vasilevskiy Professor Nick Wright Dr Alton Horsfall Professor Anthony O'Neill et al. | Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide | 2005 |
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Dr Alton Horsfall Peter Tappin Praneet Bhatnagar Professor Nick Wright Dr Konstantin Vasilevskiy et al. | Optimisation of 4H-SIC MOSFET structures for logic applications | 2005 |
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Dr Konstantin Vasilevskiy Professor Nick Wright Irina Nikitina Dr Alton Horsfall Professor Anthony O'Neill et al. | Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing | 2005 |
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Irina Nikitina
| Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE | 2002 |
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Irina Nikitina
| Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE | 2002 |
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Irina Nikitina
| Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates | 2001 |
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Irina Nikitina
| Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC | 2001 |
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Irina Nikitina
| Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions | 2001 |
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Dr Konstantin Vasilevskiy Irina Nikitina
| Phase Formation at Rapid Thermal Annealing of Al/Ti/Ni Ohmic Contacts on 4H-SiC | 2001 |
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Irina Nikitina
| Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy | 2001 |
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Irina Nikitina
| Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates | 2001 |
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Irina Nikitina
| Structural and Morphological characterisation of Al/Ti-based ohmic contacts on p-type 4H-SiC annealed under various conditions | 2000 |
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Irina Nikitina
| Dislocation reduction in AlN and GaN bulk crystals grown by HVPE | 1999 |
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Irina Nikitina
| Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE | 1999 |
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