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Lookup NU author(s): Christopher Wilson,
Dr Alton Horsfall,
Professor Anthony O'Neill
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This work reports the integration of a mechanical sensor to monitor stress directly in 100 nm critical dimension Cu interconnects designed to be compatible with industrial processes. The existing release methodology developed for larger scale sensors is discussed and evaluated for Cu/Low-k damascene integration schemes relevant to high-performance integrated circuits. Etching the advanced low-k SiOCH dielectrics and SiCN/O liners requires an extension of the existing techniques based on wet HF etching or dry fluorine plasma etching of SiO2. Thus, sensor release methods are optimized for the new materials and the scaled Cu sensor geometry optimized. Finally the released structure is demonstrated in both single and dual damascene technology.
Author(s): Wilson CJ, Croes K, Van Cauwenberghe M, Tokei Z, Beyer GP, Horsfall AB, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
Notes: Article no. 115018
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