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A NEMS-based sensor to monitor stress in deep sub-micron Cu/Low-k interconnects

Lookup NU author(s): Christopher Wilson, Dr Alton Horsfall, Professor Anthony O'Neill

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Abstract

This work reports the integration of a mechanical sensor to monitor stress directly in 100 nm critical dimension Cu interconnects designed to be compatible with industrial processes. The existing release methodology developed for larger scale sensors is discussed and evaluated for Cu/Low-k damascene integration schemes relevant to high-performance integrated circuits. Etching the advanced low-k SiOCH dielectrics and SiCN/O liners requires an extension of the existing techniques based on wet HF etching or dry fluorine plasma etching of SiO2. Thus, sensor release methods are optimized for the new materials and the scaled Cu sensor geometry optimized. Finally the released structure is demonstrated in both single and dual damascene technology.


Publication metadata

Author(s): Wilson CJ, Croes K, Van Cauwenberghe M, Tokei Z, Beyer GP, Horsfall AB, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2009

Volume: 24

Issue: 11

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/24/11/115018

DOI: 10.1088/0268-1242/24/11/115018

Notes: Article no. 115018 8 pages


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