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Application of a Nano-Mechanical Sensor to Monitor Stress in Copper Damascene Interconnects

Lookup NU author(s): Christopher Wilson, Professor Anthony O'Neill, Dr Alton Horsfall

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Abstract

A mechanical sensor is used to probe the stress evolution in deep sub-micron damascene Cu interconnects. Stress increases with post-plating anneal temperature. However, a reduction in volume average stress can occur when dominated by stress relaxation in other axes. The stress was shown to increase following extended anneals due to restricted grain growth in the bamboo like interconnects. This indicates the post-plaiting anneal can play an important role in defining interconnect stress. Furthermore, this work demonstrates that the current technique can be used to monitor stress in back-end-of-line metallization and meet future nano-scale characterization requirements. (C) 2009 The Japan Society of Applied Physics


Publication metadata

Author(s): Wilson CJ, Croes K, Tokei Z, Vereecke B, Beyer GP, O'Neill AG, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Applied Physics Express

Year: 2009

Volume: 2

Issue: 9

Pages: 096503

ISSN (print): 1882-0778

ISSN (electronic): 1882-0786

Publisher: Institute of Pure and Applied Physics

URL: http://dx.doi.org/10.1143/APEX.2.096503

DOI: 10.1143/APEX.2.096503

Notes: Article no. 096503 3 pages


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