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Source-drain engineering for channel-limited PMOS device performance: Advances in understanding of amorphization-based implant techniques

Lookup NU author(s): Professor Nick Cowern

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Abstract

This paper discusses the role of amorphisation and residual end-of-range defects in p-channel source/drain engineering. A comparison between preamorphisation and molecular implant approaches shows up some important common features of electrical activation, diffusion, and junction leakage, related to the formation and location of boron-interstitial and self-interstitial clusters. The success of these techniques depends on confining 'end-of-range' defects -whether TEM-visible defects or sub-microscopic clusters - within the narrow region between the boron implant peak and the source-drain/halo depletion region. This observation points to significant improvements that can still be made in implantation processing for ultrashallow junctions. © 2008 Materials Research Society.

Publication metadata

Author(s): Cowern NE

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium Proceedings: MRS Spring Meeting

Year of Conference: 2008

Pages: 143-154

ISSN: 0272-9172

Publisher: Materials Research Society

Library holdings: Search Newcastle University Library for this item

ISBN: 9781605110400

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