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Lookup NU author(s): Professor Nick Cowern
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This paper discusses the role of amorphisation and residual end-of-range defects in p-channel source/drain engineering. A comparison between preamorphisation and molecular implant approaches shows up some important common features of electrical activation, diffusion, and junction leakage, related to the formation and location of boron-interstitial and self-interstitial clusters. The success of these techniques depends on confining 'end-of-range' defects -whether TEM-visible defects or sub-microscopic clusters - within the narrow region between the boron implant peak and the source-drain/halo depletion region. This observation points to significant improvements that can still be made in implantation processing for ultrashallow junctions. © 2008 Materials Research Society.
Author(s): Cowern NE
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Research Society Symposium Proceedings: MRS Spring Meeting
Year of Conference: 2008
Publisher: Materials Research Society
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