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Interface and carrier transport behaviour in Al/HfO2/SiO 2/SiC Structure

Lookup NU author(s): Dr Rajat Mahapatra, Dr Alton Horsfall, Professor Nick Wright


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In this study we report interface and carrier transport behaviour in Al/HfO2/SiO2/SiC MIS structure. The density of the interface states (Dit) and the oxide trapped charges (Not) are found to be ∼7 × 1011 eV-1cm-2 @ Ec-Et = 0.2 eV, and ∼ 4.8 × 1011 cm-2. The temperature dependencies on gate current density are explored to study the different charge transport mechanisms through the HfO 2-based dielectric stack on 4H-SiC. In the low voltage region, the conduction mechanism is controlled by a space charge limited or electronic hopping conduction process. Beyond this region (1.25 MV/cm 2.5 MV/cm), and at higher temperatures Schottky emission (SE) fits the data very well. The barrier height is found to be ∼1.5 eV, which is higher than the value for just HfO2 on SiC © (2009) Trans Tech Publications, Switzerland.

Publication metadata

Author(s): Mahapatra R, Horsfall AB, Wright NG

Editor(s): Suzuki, A., Okumura, H., Kimoto, T., Fuyuki, T., Fukuda, K., Nishizawa, S.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 12th International Conference on Silicon Carbide and Related Materials (ICSCRM 2007)

Year of Conference: 2009

Pages: 759-762

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: .10.4028/

DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375