ePrints

Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates

Lookup NU author(s): Dr Rajat Mahapatra

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Maikap S, Je-Hun Lee , Mahapatra R, Samik Pal, No YS, Won-Kook Choi, Ray SK, Doh-Y Kim

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2005

Volume: 49

Issue: 4

Pages: 524-528

Print publication date: 01/04/2005

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/j.sse.2004.10.009

DOI: 10.1016/j.sse.2004.10.009

Altmetrics

Share