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Lookup NU author(s): Professor Nick Wright,
Dr Christopher Johnson,
Dr Alton Horsfall,
Dr Konstantin Vasilevskiy
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The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best achieved by the adoption of co-design techniques in which the optimisation of the SiC device is performed in parallel to that of the package and the overall application. This paper considers suitable techniques for this co-design and describes new approaches to the development of SiC technology for practical applications. © (2009) Trans Tech Publications, Switzerland.
Author(s): Wright NG, Johnson CM, Horsfall AB, Buttay C, Vassilevski K, Loh WS, Skuriat R, Agyakwa P
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 12th International Conference on Silicon Carbide and Related Materials (ICSCRM 2007)
Year of Conference: 2009
Publisher: Materials Science Forum: Trans Tech Publications Ltd
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