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Electrical properties of thermally grown HfO2 and HfO 2/TiO2/HfO2 MIM capacitors fabricated on SiO2/Si substrate and HfO2 MIM capacitors fabricated on sapphire

Lookup NU author(s): Bing Miao, Dr Rajat Mahapatra, Dr Alton Horsfall


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The scaling of contemporary metal-insulator-metal (MIM) capacitors require dielectrics of higher dielectric constant (>10), such as hafnium oxide (∼18) and titanium oxide (∼40). High-k dielectrics such as HfO 2 and HfO2/TiO2/HfO2 have been grown by thermal oxidation to fabricate MIM capacitors on SiO2/Si substrates and on sapphire substrates also. The MIM capacitor using HfO 2/TiO2/HfO2 dielectric film shows a similar frequency dependence using HfO2 dielectric on SiO2/Si substrate, while its voltage linearity coefficients, leakage current and temperature coefficient are higher than the capacitor employing HfO2 dielectric. The MIM capacitor with HfO2 dielectric fabricated on sapphire substrate shows the strongest frequency dependence, voltage linearity coefficient and temperature dependence which is related to the surface roughness. The high capacitance density of these capacitors, ranging from 5.21 fF/μm2 to 4.20 fF/μm2 meets the ITRS requirements for analog capacitor up to 2012. © 2008 Materials Research Society.

Publication metadata

Author(s): Miao B, Mahapatra R, Wright N, Horsfal A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium Proceedings: MRS Spring Meeting

Year of Conference: 2008

Pages: 43-48

ISSN: 0272-9172

Publisher: Materials Research Society

Library holdings: Search Newcastle University Library for this item

ISBN: 9781605608532