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Lookup NU author(s): Dr Alton Horsfall,
Professor Anthony O'Neill
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An in situ study of self-forming barriers from a Cu-Mn alloy was performed to investigate the barrier growth using X-ray diffraction on damascene lines. The associated evolution in interconnect texture and Cu stress was also observed. The shift in Cu diffraction peak position was used to determine the change in Mn concentration and hence, estimate the thickness of the MnSixOy barrier. The observed peak shift followed a log(t) behaviour and is described well by metal oxidation kinetics, following the field enhanced diffusion model. We used multiple anneal temperatures to study the activation of the formation process, demonstrating a faster barrier formation with higher ion excitation. A strong [1 1 1] Cu texture was shown to develop during the anneal in contrast to traditional PVD barrier systems. Finally, the stress in the 100 nm Cu lines was calculated, observing a large in-plane relaxation when using a self-forming barrier due to reduced confinement. © 2009 Elsevier B.V. All rights reserved.
Author(s): Wilson C, Volders H, Croes K, Pantouvaki M, Beyer G, Horsfall A, O'Neill A, Tokei Z
Publication type: Article
Publication status: Published
Journal: Microelectronic Engineering
ISSN (print): 0167-9317
ISSN (electronic): 1873-5568
Publisher: Elsevier BV
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