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In situ X-ray diffraction study of self-forming barriers from a Cu-Mn alloy in 100 nm Cu/low-k damascene interconnects using synchrotron radiation

Lookup NU author(s): Dr Alton Horsfall, Professor Anthony O'Neill

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Abstract

An in situ study of self-forming barriers from a Cu-Mn alloy was performed to investigate the barrier growth using X-ray diffraction on damascene lines. The associated evolution in interconnect texture and Cu stress was also observed. The shift in Cu diffraction peak position was used to determine the change in Mn concentration and hence, estimate the thickness of the MnSixOy barrier. The observed peak shift followed a log(t) behaviour and is described well by metal oxidation kinetics, following the field enhanced diffusion model. We used multiple anneal temperatures to study the activation of the formation process, demonstrating a faster barrier formation with higher ion excitation. A strong [1 1 1] Cu texture was shown to develop during the anneal in contrast to traditional PVD barrier systems. Finally, the stress in the 100 nm Cu lines was calculated, observing a large in-plane relaxation when using a self-forming barrier due to reduced confinement. © 2009 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Wilson C, Volders H, Croes K, Pantouvaki M, Beyer G, Horsfall A, O'Neill A, Tokei Z

Publication type: Article

Publication status: Published

Journal: Microelectronic Engineering

Year: 2010

Volume: 87

Issue: 3

Pages: 398-401

ISSN (print): 0167-9317

ISSN (electronic): 1873-5568

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.mee.2009.06.023

DOI: 10.1016/j.mee.2009.06.023


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