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Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD

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Inventor(s): Zekentes K, Vassilevski K

Publication type: Patent

Publication status: Published

Year: 2009

Print publication date: 06/10/2000

Country: CA 2322595

Source Publication Date: 6 October 2000

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