Toggle Main Menu Toggle Search

Open Access padlockePrints

Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition

Lookup NU author(s): Dr Gabriela Dilliway, Professor Nick Cowern


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


The time evolution of self-assembled Ge islands, during low-pressure chemical vapor deposition (LPCVD) of Ge on Si at 650 °C using high growth rates, has been investigated by atomic force microscopy, transmission electron microscopy, and Rutherford backscattering spectrometry. We have found three different island structures. The smallest islands are ldquolens-shapedrdquo and characterized by a rather narrow size distribution, ap4 nm high and ap20 nm wide. Next to form are a distinct population of larger multifaceted ldquodome-shapedrdquo islands, up to 25 nm high and 80–150 nm wide. Finally, the largest islands that form are square-based truncated pyramids with a very narrow size distribution, ap50 nm high and ap250 nm wide. The pyramidal islands normally seen in the intermediate size range (ap150 nm) are not observed. The small lens-shaped islands appear to be defect free, while some of the multifaceted islands as well as all the large truncated pyramids contain misfit dislocations. The existence of multifaceted islands, in the size range where pyramids have previously been reported and of truncated pyramids in the size range where multifaceted ldquodome-shapedrdquo islands have previously been reported, is attributed to the high growth rate used. Furthermore, under the growth conditions used, the truncated-pyramid-shaped islands are characterized by a very narrow size distribution.

Publication metadata

Author(s): Cowern NEB; Dilliway GDM; Bagnall DM; Jeynes C

Publication type: Article

Publication status: Published

Journal: Journal of Materials Science: Materials in Electronics

Year: 2003

Volume: 14

Issue: 5-7

Pages: 323-327

ISSN (print): 0957-4522

ISSN (electronic): 1573-482X

Publisher: Springer


DOI: 10.1023/A:1023975928759


Altmetrics provided by Altmetric