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Recovery of Ohmic Contacts Formed on C-face 4H-SiC Following High Temperature Post-Processing

Lookup NU author(s): Benjamin Furnival, Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Alton Horsfall


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In this paper we demonstrate the recovery of Ohmic contacts formed on C-face 4H-SiC following high temperature post-processing. After a typical high-kappa dielectric anneal in O-2 for 3 minutes at 650 degrees C, replacing the metallization stack is revealed to significantly reduce the damage produced in the I-V characteristics. Using C-AFM we have also studied the mechanisms responsible for Ohmic contact formation, presenting a possible relationship between changes in the SiC crystal orientation and the establishment of Ohmic behaviour.

Publication metadata

Author(s): Furnival BJD, Vassilevski K, Wright NG, Horsfall AB

Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2011

Pages: 469-472

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.


DOI: 10.4028/

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