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Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-ray Detectors

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Alton Horsfall


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Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (10(13) cm(-2), 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

Publication metadata

Author(s): Stevens RC, Vassilevski K, Lees JE, Wright NG, Horsfall AB

Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2011

Pages: 547-550

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item