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Lookup NU author(s): Santosh Shedabale,
Dr Gordon Russell,
Professor Alex Yakovlev
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The effects of process variations on the performance of nanometre CMOS circuits have become a serious design issue, aggravated by further scaling of device dimensions. This article presents a statistical TCAD tool called Multilevel-Partitioned REsponse Surface Modelling (M-PRES) to model the impact of manufacturing process variations on circuit performance; an SRAM cell is used as a demonstration vehicle for the tool. A new non-Gaussian approach for modelling variations for sub-90 nm technologies is also presented. A comparison is made with the Monte Carlo approach, demonstrating four times (4x) computationally efficiency for M-PRES without the loss of accuracy. The M-PRES models are also re-usable reducing the computation time for the analysis of other sets of process data down to a few tens of seconds.
Author(s): Shedabale S; Russell G; Yakovlev A
Publication type: Article
Publication status: Published
Journal: IET Circuits, Devices and Systems Series
Print publication date: 01/09/2011
ISSN (print): 1751-858X
ISSN (electronic): 1751-8598
Publisher: The Institution of Engineering and Technology
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