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Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors

Lookup NU author(s): Mouhsine Fjer, Dr Stefan Persson, Dr Enrique Escobedo-Cousin, Professor Anthony O'Neill

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Abstract

The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization.


Publication metadata

Author(s): Fjer M; Persson S; O'Neill AG; Escobedo-Cousin E

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2011

Volume: 58

Issue: 12

Pages: 4196-4203

Print publication date: 10/10/2011

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2011.2167753

DOI: 10.1109/TED.2011.2167753


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