Toggle Main Menu Toggle Search

Open Access padlockePrints

Oxidation modelling for SiC

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


A simple mechanistic model of the oxidation of SiC is presented and analysed using Monte-Carlo simulation techniques. The model explains the observed anisotropic oxidation rate of SiC in terms of the effect of weakening/strengthening of Si-C bonds arising from the on-going incorporation of highly electronegative oxygen atoms into the crystal lattice. The extraction of key process metrics (such as oxide thickness, interface roughness and oxide defect density) from the Monte-Carlo simulations is discussed.

Publication metadata

Author(s): Wright NG, Johnson CM, O'Neill AG

Editor(s): Binari, S.C., Burk, A.A., Melloch, M.R., Nguyen, C.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications

Year of Conference: 1999

Pages: 135-140

ISSN: 0272-9172

Publisher: Materials Research Society

Library holdings: Search Newcastle University Library for this item

Series Title: MRS Symposium Proceedings

ISBN: 9781558994799