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Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill
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A simple mechanistic model of the oxidation of SiC is presented and analysed using Monte-Carlo simulation techniques. The model explains the observed anisotropic oxidation rate of SiC in terms of the effect of weakening/strengthening of Si-C bonds arising from the on-going incorporation of highly electronegative oxygen atoms into the crystal lattice. The extraction of key process metrics (such as oxide thickness, interface roughness and oxide defect density) from the Monte-Carlo simulations is discussed.
Author(s): Wright NG, Johnson CM, O'Neill AG
Editor(s): Binari, S.C., Burk, A.A., Melloch, M.R., Nguyen, C.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications
Year of Conference: 1999
Pages: 135-140
ISSN: 0272-9172
Publisher: Materials Research Society
Library holdings: Search Newcastle University Library for this item
Series Title: MRS Symposium Proceedings
ISBN: 9781558994799
