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Lookup NU author(s): Dr Rajat Mahapatra,
Dr Alton Horsfall,
Professor Nick Wright
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Resistive switching (RS) characteristics are investigated in fabricated Al-doped HfO2 metal-insulator-metal devices. It is proposed that oxygen vacancies in Al-doped HfO2 devices play a key role as electron trap centers, leading to the forming-free reversible bipolar resistance switching behavior. The conduction mechanism can be explained by electron trapping and detrapping from such oxygen vacancy-related traps in the Al-doped HfO2 films and is dominated by a trap-controlled space-charge-limited current (SCLC) mechanism. A large RS ratio (similar to 10(6)) and excellent retention characteristics are also observed at room temperature as well as at 85A degrees C. Such devices have potential for application in nonvolatile random-access memory.
Author(s): Mahapatra R, Horsfall AB, Wright NG
Publication type: Article
Publication status: Published
Journal: Journal of Electronic Materials
Print publication date: 01/04/2012
ISSN (print): 0361-5235
ISSN (electronic): 1543-186X
Publisher: Springer New York LLC
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