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Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator

Lookup NU author(s): Daniel Brennan, Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Alton Horsfall


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This paper reports on direct frequency modulation of a RF Colpitts oscillator, realised from silicon carbide devices and proprietary components, capable of transmitting sensor data whilst operating at 300 degrees C. Utilizing a reversed biased Schottky diode as a varactor in an LC oscillator, it is possible to modulate the frequency of an RF carrier by applying external voltage signals. These experiments have shown that a 10V bias will increase the frequency by as much as 10%, however signals as low as 10mV are easily detectable with standard silicon receivers.

Publication metadata

Author(s): Brennan D, Vasilevskiy K, Wright N, Horsfall A

Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)

Year of Conference: 2012

Pages: 1269-1272

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783037854198