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Lookup NU author(s): Daniel Brennan, Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Alton Horsfall
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This paper reports on direct frequency modulation of a RF Colpitts oscillator, realised from silicon carbide devices and proprietary components, capable of transmitting sensor data whilst operating at 300 degrees C. Utilizing a reversed biased Schottky diode as a varactor in an LC oscillator, it is possible to modulate the frequency of an RF carrier by applying external voltage signals. These experiments have shown that a 10V bias will increase the frequency by as much as 10%, however signals as low as 10mV are easily detectable with standard silicon receivers.
Author(s): Brennan D, Vasilevskiy K, Wright N, Horsfall A
Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)
Year of Conference: 2012
Pages: 1269-1272
ISSN: 0255-5476
Publisher: Trans Tech Publications Ltd.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.1269
DOI: 10.4028/www.scientific.net/MSF.717-720.1269
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum
ISBN: 9783037854198
