Browse by author
Lookup NU author(s): Daniel Brennan,
Dr Konstantin VasilevskiyORCiD,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
This paper reports on direct frequency modulation of a RF Colpitts oscillator, realised from silicon carbide devices and proprietary components, capable of transmitting sensor data whilst operating at 300 degrees C. Utilizing a reversed biased Schottky diode as a varactor in an LC oscillator, it is possible to modulate the frequency of an RF carrier by applying external voltage signals. These experiments have shown that a 10V bias will increase the frequency by as much as 10%, however signals as low as 10mV are easily detectable with standard silicon receivers.
Author(s): Brennan D, Vasilevskiy K, Wright N, Horsfall A
Editor(s): Devaty, R.P., Dudley, M., Chow, T.P., Neudeck, P.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM)
Year of Conference: 2012
Publisher: Trans Tech Publications Ltd.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum