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Leakage current asymmetry and resistive switching behavior of SrTiO3

Lookup NU author(s): Professor Jon Goss, Dr Kelvin Kwa, Raied Al-Hamadany, Dan Appleby, Dr Nilhil Ponon, Professor Anthony O'Neill

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Abstract

The resistive switching characteristics of SrTiO3 metal-insulator-metal capacitors are investigated. The current-density versus voltage (J-V) characteristics show asymmetry at all temperatures examined, with resistive switching behavior observed at elevated temperatures. The asymmetry is explained by the relative lack of electron traps at one electrode, which is determined from the symmetric J-V curve obtained at room temperature due to the redistribution of the dominant electrical defects in the film. We present evidence for the model of resistive switching originating from defect diffusion (possibly oxygen vacancies) at high temperatures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764544]

Publication metadata

Author(s): Mojarad SA, Goss JP, Kwa KSK, Zhou ZY, Al-Hamadany RAS, Appleby DJR, Ponon NK, O'Neill A

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2012

Volume: 101

Issue: 17

Print publication date: 26/10/2012

Date deposited: 29/07/2014

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.4764544

DOI: 10.1063/1.4764544

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