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Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially-strain- compensated SiGeC/Si heterolayers

Lookup NU author(s): Dr Rajat Mahapatra

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Abstract

The interfacial characteristics of high-κ ZrO2 on O2 and N2O-plasma-treated Si0.69Ge0.3C0.01 surfaces have been investigated using secondary ion mass spectroscopy and x-ray photoelectron spectroscopy. N2O-plasma-treated films show the formation of a nitrogen-rich Zr–germano–silicate interfacial layer between the deposited ZrO2 and SiGeC films. The N-treated film has a higher accumulation capacitance (∼1200 pF), lower leakage current density (7×10−9 A/cm2−1 V), higher breakdown field (∼11 MV/cm), and higher interfacial layer dielectric constant (∼10) than that of the non-nitrogen-treated films. Relatively lower positive trap charge generated by a constant current stressing in N-incorporated dielectric films makes it attractive for scaled metal–oxide–semiconductor field-effect transistor applications.

Publication metadata

Author(s): Mahapatra R; Maikap S; Lee JH; Kar GS; Dhar A; Hwang NM; Kim DY; Mathur BK; Ray SK

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2003

Volume: 82

Issue: 24

Pages: 4331

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1583143

DOI: 10.1063/1.1583143

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