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Improvement of High-Frequency FinFET Performance by Fin Width Engineering

Lookup NU author(s): Sergej Makovejev, Dr Sarah Olsen, Professor Jean-Pierre Raskin

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Abstract

Frequency dependent behaviour of MOSFETs arises from self-heating and source-to-drain coupling through the substrate. In this work the output conductance variation with frequency is experimentally investigated in FinFETs with various fin widths. We demonstrate that fin narrowing suppresses the output conductance degradation due to the substrate effect in the high-frequency range such that self-heating dominates the output conductance variation. The work thus emphasizes the importance of thermal management and device design in FinFETs.


Publication metadata

Author(s): Makovejev S, Olsen SH, Arshad MKM, Flandre D, Raskin JP, Kilchytska V

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: IEEE International SOI Conference

Year of Conference: 2012

Pages: 1-2

ISSN: 1078-621X

Publisher: IEEE

URL: http://dx.doi.org/10.1109/SOI.2012.6404381

DOI: 10.1109/SOI.2012.6404381

Notes: Online ISBN: 9781467326896

Library holdings: Search Newcastle University Library for this item

ISBN: 9781467326902


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