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Lookup NU author(s): Sergej Makovejev,
Dr Sarah Olsen,
Professor Jean-Pierre Raskin
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Frequency dependent behaviour of MOSFETs arises from self-heating and source-to-drain coupling through the substrate. In this work the output conductance variation with frequency is experimentally investigated in FinFETs with various fin widths. We demonstrate that fin narrowing suppresses the output conductance degradation due to the substrate effect in the high-frequency range such that self-heating dominates the output conductance variation. The work thus emphasizes the importance of thermal management and device design in FinFETs.
Author(s): Makovejev S, Olsen SH, Arshad MKM, Flandre D, Raskin JP, Kilchytska V
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: IEEE International SOI Conference
Year of Conference: 2012
Notes: Online ISBN: 9781467326896
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