Publications by Dr Sarah Olsen - ePrints

Browsing publications by Dr Sarah Olsen.

Newcastle Authors	Title	Year
Merve Yakut Atreyee Roy Jake Sheriff Dr Sarah Olsen Dr Konstantin Vasilevskiy et al.	Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In Situ Nitridation of SiC Surface	2024
Dr Barry Gallacher Dr Sarah Olsen	The effect of temperature and film thickness on domain wall energy density, coercivity force and magnetostriction of galfenol films	2024
Dr Jesus Urresti Ibanez Dr Sarah Olsen Professor Nick Wright Professor Anthony O'Neill	Design and Analysis of High Mobility Enhancement Mode 4H-SiC MOSFETs Using a Thin SiO₂ / Al₂O₃Gate Stack	2019
Professor Anthony O'Neill Faiz Arith Dr Jesus Urresti Ibanez Dr Konstantin Vasilevskiy Professor Nick Wright et al.	High Mobility 4H-SiC MOSFET	2018
Faiz Arith Dr Jesus Urresti Ibanez Dr Konstantin Vasilevskiy Dr Sarah Olsen Professor Nick Wright et al.	High mobility 4H-SiC MOSFET using a thin SiO₂/Al₂O₃ gate stack	2018
Faiz Arith Dr Jesus Urresti Ibanez Dr Konstantin Vasilevskiy Dr Sarah Olsen Professor Nick Wright et al.	Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO₂ / Al₂O₃ Gate Stack	2018
Dr Sarah Olsen Professor Anthony O'Neill	Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures	2018
Sherko Ghaderi Khalil Hassan Dr Xiao Han Dr Jiabin Wang Professor Lidija Siller et al.	Thermoelectric characterization of nickel-nanowires and nanoparticles embedded in silica aerogels	2018
Muhsien Yazid Dr Sarah Olsen Dr Glynn Atkinson	Nucleation regions and coercivity determination of sintered Nd-Fe-B magnets	2017
Muhsien Yazid Dr Sarah Olsen Dr Glynn Atkinson	MFM study of a sintered Nd-Fe-B magnet: analysing domain structure and measuring defect size in 3D view	2016
Dr Sarah Olsen Dr Enrique Escobedo-Cousin Professor Jean-Pierre Raskin	Roughness analysis in strained silicon-on-insulator wires and films	2014
Sergej Makovejev Dr Sarah Olsen Professor Jean-Pierre Raskin	Time and Frequency Domain Characterization of Transistor Self-Heating	2013
Sergej Makovejev Dr Sarah Olsen Professor Jean-Pierre Raskin	Improvement of High-Frequency FinFET Performance by Fin Width Engineering	2012
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Jean-Pierre Raskin	On-chip tensile testing of nanoscale silicon free-standing beams	2012
Ferran Ureña Begara Dr Sarah Olsen Professor Lidija Siller Professor Jean-Pierre Raskin	Strain in silicon nanowire beams	2012
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Jean-Pierre Raskin	Experimental observations of surface roughness in uniaxially loaded strained Si microelectromechanical systems-based structures	2011
Raman Kapoor Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Steve Bull	Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices	2011
Sergej Makovejev Dr Sarah Olsen Professor Jean-Pierre Raskin	RF Extraction of Self-Heating Effects in FinFETs	2011
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Steve Bull	Characterising gate dielectrics in high mobility devices using novel nanoscale techniques	2010
Rouzet Agaiby Dr Sarah Olsen Professor Anthony O'Neill	Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices	2010
Layi Alatise Dr Sarah Olsen Professor Anthony O'Neill	Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks	2010
Layi Alatise Dr Sarah Olsen Professor Anthony O'Neill	Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics	2010
Sergej Makovejev Dr Sarah Olsen Professor Jean-Pierre Raskin	Self-heating effect characterisation in SOI FinFETs	2010
Dr Piotr Dobrosz Dr Sarah Olsen	Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs	2010
Dr Piotr Dobrosz Dr Sarah Olsen	Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs	2010
Dr Stefan Persson Mouhsine Fjer Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill et al.	Strained-Silicon Heterojunction Bipolar Transistor	2010
Dr Piotr Dobrosz Dr Sarah Olsen	The High-Mobility Bended n-Channel Silicon Nanowire Transistor	2010
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs	2010
Liang Yan Dr Sarah Olsen Professor Anthony O'Neill	1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack	2009
Dr Sarah Olsen	3D analysis of strain in an electrically measured strained SiGe MOSFET	2009
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter	2009
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill	Defect identification in strained Si/SiGe heterolayers for device applications	2009
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter	2009
Dr Piotr Dobrosz Dr Sarah Olsen	Investigation of oxidation-induced strain in a top-down Si nanowire platform	2009
Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill	Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs	2009
Dr Sarah Olsen Professor Nick Cowern Professor Anthony O'Neill	Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks	2009
Dr Sarah Olsen Liang Yan Dr Enrique Escobedo-Cousin Professor Anthony O'Neill	Strained Si/SiGe MOS technology: Improving gate dielectric integrity	2009
Lisa Sanderson Dr Piotr Dobrosz Dr Sarah Olsen Professor Steve Bull	Tip enhanced Raman spectroscopy for high resolution assessment of strained silicon devices	2009
Dr Stefan Persson Mouhsine Fjer Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill et al.	Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates	2008
Layi Alatise Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	Improved Analog Performance of Strained Si n-MOSFETs on Thin SiGe Strained Relaxed Buffers	2008
Liang Yan Dr Sarah Olsen Dr Enrique Escobedo-Cousin Professor Anthony O'Neill	Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates	2008
Dr Sarah Olsen	Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors	2008
Professor Anthony O'Neill Dr Sarah Olsen	Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating	2008
Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill	Investigation of Strain Profile Optimization in gate-all-around suspended silicon nanowire FET	2008
Rouzet Agaiby Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al.	Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers	2008
Rouzet Agaiby Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al.	Nanometer strain profiling through Si/SiGe quantum layers	2008
Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al.	Nanoscale strain characterisation for ultimate CMOS and beyond	2008
Dr Sarah Olsen Dr Piotr Dobrosz Rouzet Agaiby Dr Yuk Tsang Layi Alatise et al.	Nanoscale strain characterisation for ultimate CMOS and beyond	2008
Dr Piotr Dobrosz Dr Sarah Olsen Professor Steve Bull Dr Yuk Tsang Rouzet Agaiby et al.	Nanoscale strain characterisation in patterned SSOI structures	2008
Professor Anthony O'Neill Dr Yuk Tsang Dr Barry Gallacher Dr Sarah Olsen	Piezomobility description of strain-induced mobility	2008
Professor Anthony O'Neill Rouzet Agaiby Dr Sarah Olsen Yang Yang	Reduced self-heating by strained silicon substrate engineering	2008
Dr Sarah Olsen John Varzgar Dr Enrique Escobedo-Cousin Rouzet Agaiby Dr Piotr Dobrosz et al.	Strain engineering for high mobility channels	2008
Professor Andrew Houlton Dr Ben Horrocks Professor Nick Wright Dr Sarah Olsen Professor Anthony O'Neill et al.	Top down and Bottom-up Routes to Nanoscale Electronic Components	2008
Dr Yuk Tsang Professor Anthony O'Neill Dr Barry Gallacher Dr Sarah Olsen	Using piezoresistance model with C-R conversion for modeling of strain-induced mobility	2008
Professor Anthony O'Neill Dr Sarah Olsen Yang Yang Rouzet Agaiby	[invited] Engineering Self-Heating by Strained Silicon Technology	2007
Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill	Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress	2007
Professor Anthony O'Neill Dr Sarah Olsen Dr Yuk Tsang Dr Piotr Dobrosz	Evolution of strain engineering for Si technology	2007
Dr Sarah Olsen	Increased flicker noise with increasing Ge concentration in the virtual substrate of strained Si surface channel n-MOSFETs	2007
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Enrique Escobedo-Cousin Deepak Ramakrishnan et al.	Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures	2007
Dr Sarah Olsen	Nanoscale characterisation and modelling	2007
Rouzet Agaiby Yang Yang Dr Sarah Olsen Professor Anthony O'Neill	Quantifying self-heating effects in strained Si MOSFETs with scaling	2007
Rimoon Agaiby Yang Yang Dr Sarah Olsen Professor Anthony O'Neill	Quantifying self-heating effects with scaling in globally strained Si MOSFETs	2007
Professor Anthony O'Neill Dr Sarah Olsen Rimoon Agaiby	Reduced self-heating by strained Si substrate engineering	2007
Professor Anthony O'Neill Dr Sarah Olsen Yang Yang Rouzet Agaiby	Reduced self-heating by strained Si substrate engineering	2007
Professor Anthony O'Neill Dr Sarah Olsen Yang Yang Rouzet Agaiby	Reduced Self-Heating by Strained Silicon Substrate Engineering	2007
Dr Sarah Olsen	Strained SI/SiGe MOS Technology	2007
Dr Sarah Olsen Rouzet Agaiby Dr Enrique Escobedo-Cousin Professor Anthony O'Neill	Strained Si/SiGe MOS technology: improving gate dielectric integrity	2007
Dr Sarah Olsen Dr Enrique Escobedo-Cousin Professor Anthony O'Neill	Strained Si/SiGe MOS technology: Improving gate dielectric integrity	2007
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Anthony O'Neill Layi Alatise Rouzet Agaiby et al.	Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs	2007
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill et al.	Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers	2007
Liang Yan Dr Sarah Olsen Dr Mehdi Kanoun Rimoon Agaiby Goutan Dalapati et al.	Analysis of gate leakage characteristics in strained Si MOSFETs	2006
Liang Yan Dr Sarah Olsen Dr Mehdi Kanoun Rimoon Agaiby Goutan Dalapati et al.	Analysis of Gate Leakage in Strained Si MOSFETs	2006
Dr Sarah Olsen Dr Mehdi Kanoun Mohamed Al-Areeki Rimoon Agaiby Goutan Dalapati et al.	Analysis of gate leakage in strained Si MOSFETs	2006
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Kelvin Kwa Goutan Dalapati Rouzet Agaiby et al.	Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture	2006
Dr Sanatan Chattopadhyay John Varzgar Dr Johan Seger Dr Yuk Tsang Dr Kelvin Kwa et al.	Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices	2006
Dr Sanatan Chattopadhyay John Varzgar Dr Johan Seger Dr Yuk Tsang Dr Kelvin Kwa et al.	Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices	2006
Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby Dr Johan Seger et al.	Control of self-heating in thin virtual substrate strained Si MOSFETs	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin Rimoon Agaiby Professor Steve Bull et al.	Device related characterisation techniques for Si/SiGe heterostructures	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Yuk Tsang Dr Piotr Dobrosz	Evolution of strain engineering for Si technology	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method	2006
Liang Yan Dr Sarah Olsen Dr Mehdi Kanoun Professor Anthony O'Neill	Gate leakage mechanisms in strained Si devices	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer	2006
John Varzgar Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Sarah Olsen Professor Anthony O'Neill et al.	Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer	2006
Dr Suresh Uppal John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen Professor Anthony O'Neill et al.	Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation	2006
Dr Suresh Uppal John Varzgar Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rimoon Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rouzet Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Dr Yuk Tsang et al.	Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs	2006
Rimoon Agaiby Professor Anthony O'Neill Dr Sarah Olsen	Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling	2006
Rimoon Agaiby Professor Anthony O'Neill Dr Sarah Olsen	Quantifying self-heating effects in strained Si MOSFETs with scaling	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
Dr Sarah Olsen Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Rouzet Agaiby Rimoon Agaiby et al.	Strain characterisation in advanced Si devices	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby et al.	Strained Si MOSFETs using thin virtual substrates	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby et al.	Strained Si technology	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Sanatan Chattopadhyay	Strained Si/SiGe MOS technology	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rouzet Agaiby et al.	Strained silicon technology	2006
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Steve Bull Professor Anthony O'Neill	Structuralstability of strained Si layers on thin strain-relaxed buffers for high performance MOSFETs	2006
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Professor Steve Bull Professor Anthony O'Neill	Study of surface roughness and dislocation generation in strained Si layers grown on thin strain-relaxed buffers for high performance MOSFETs	2006
Dr Sarah Olsen Dr Piotr Dobrosz Professor Steve Bull Professor Anthony O'Neill	The relationship between strain generation and relaxation, composition and electrical performance in strained Si/SiGe MOS technology	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface	2006
Dr Sarah Olsen Professor Steve Bull Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Rouzet Agaiby et al.	Thermal stability of thin virtual substrates for high performance devices	2006
Dr Enrique Escobedo-Cousin Dr Sarah Olsen Sian Evans	X-ray studies of strained-Si heterostructures	2006
Dr Sarah Olsen Professor Anthony O'Neill	A study of SiGe/Si n-MOSFET processed and unprocessed channel layers using FIB and TEM methods	2005
Professor Anthony O'Neill Dr Sarah Olsen	Advancing strained silicon	2005
Professor Steve Bull Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill	Assessment of strained silicon/SiGe with different architectures by Raman spectroscopy	2005
Rimoon Agaiby Professor Anthony O'Neill Dr Sarah Olsen	Design considerations for strained Si/SiGe deep submicron dual-channel CMOS using high thermal budgets	2005
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Doubling speed using strained Si/SiGe CMOS technology	2005
Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Goutan Dalapati et al.	Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness	2005
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture	2005
Dr Sarah Olsen Dr Piotr Dobrosz Dr Enrique Escobedo-Cousin Professor Steve Bull Professor Anthony O'Neill et al.	Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs	2005
Rudra Dhar Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen et al.	Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates	2005
Professor Steve Bull Dr Piotr Dobrosz Dr Sarah Olsen Professor Anthony O'Neill	On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices	2005
Dr Sarah Olsen Professor Anthony O'Neill	Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures	2005
Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa Dr Jie Zhang et al.	Strained Si/SiGe CMOS: high performance without re-tooling	2005
Dr Sarah Olsen Professor Anthony O'Neill	Strained-Si NMOSFETs on thin 200 nm virtual substrates	2005
Dr Sarah Olsen Professor Anthony O'Neill Dr Piotr Dobrosz Professor Steve Bull Luke Driscoll et al.	Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors	2005
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures	2005
Dr Sarah Olsen Professor Anthony O'Neill	3D determination of a MOSFET gate morphology by FIB tomography	2004
Dr Sarah Olsen Dr Kelvin Kwa Luke Driscoll Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Design, fabrication and characterisation of strained Si/SiGe MOS transistors	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Evaluation of strained Si/SiGe material for high performance CMOS	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Evaluation of strained Si/SiGe material for high performance CMOS	2004
Lynn Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Dr Sarah Olsen Professor Anthony O'Neill	Measurement of Relaxation in Strained Silicon by Grazing Incidence In-plane X-ray Diffraction	2004
Dr Sarah Olsen Professor Anthony O'Neill	Measurement of relaxation in strained silicon by grazing incidence in-plane x-ray diffraction	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the Residual Macro and Microstrain in Strained Si/SiGe using Raman Spectroscopy Z Metal	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the residual strain in strained Si/SiGe using Raman spectroscopy	2004
Dr Sarah Olsen Professor Anthony O'Neill	Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures	2004
Dr Sarah Olsen Professor Anthony O'Neill Luke Driscoll Dr Sanatan Chattopadhyay Dr Kelvin Kwa et al.	Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Jun Zhang	Si-Based Heterojunctions and Strained Si: Growth, Characterization and Applications	2004
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges	2004
Dr Sarah Olsen Dr Kelvin Kwa Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill et al.	Strained Si/SiGe n-channel MISFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill	Strained-Si n-MOS surface-channel and buried Si0.7Ge 0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Luke Driscoll Dr Kelvin Kwa et al.	Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy	2004
Dr Piotr Dobrosz Professor Steve Bull Dr Sarah Olsen Professor Anthony O'Neill	Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy	2004
Dr Sarah Olsen Professor Anthony O'Neill	Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode	2004
Dr Sarah Olsen Professor Anthony O'Neill	Temperature sensitivity of DC operation of sub-micron strained-Si MOSFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill Professor Steve Bull Dr Sanatan Chattopadhyay Dr Kelvin Kwa et al.	Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices	2004
Dr Sarah Olsen Professor Anthony O'Neill	3D determination of a MOSFET gate morphology by FIB tomography	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Nebojsa Jankovic Professor Dr Sarah Olsen Luke Driscoll et al.	A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics	2003
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design	2003
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design	2003
Professor Anthony O'Neill Dr Sarah Olsen	Design, Fabrication and Characterisation of Strained Si/SiGe MOSFETs	2003
Dr Sarah Olsen Professor Anthony O'Neill	Gate-oxide interface roughness analyses for oxidation on strained and unstrained vicinal Si surfaces by transmission electron microscopy	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture	2003
Dr Sarah Olsen Professor Anthony O'Neill Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay et al.	High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Impact of virtual substrate Ge composition on strained Si MOSFET performance	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors	2003
Dr Sarah Olsen Professor Anthony O'Neill	Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs	2003
Dr Sarah Olsen Professor Anthony O'Neill	Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Jie Zhang	Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Luke Driscoll Dr Kelvin Kwa et al.	N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of channel thickness in strained Si/SiGe MOSFETs	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of channel thickness in strained Si/SiGe MOSFETs	2003
Dr Sarah Olsen Professor Anthony O'Neill Professor Steve Bull	Effect of metal-oxide-semiconductor processing on the surface rouhness of strained Si/SiGe material	2002
Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the nanoscale roughness of advanced MOSFET layer structures	2002
Dr Sarah Olsen Professor Anthony O'Neill	Measurement of the nanoscale roughness of advanced MOSFET layer structures	2002
Dr Sarah Olsen Professor Anthony O'Neill	Strained Si/SiGe n-channel MOSFETs: Impact of cross-hatching on device performance	2002