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Lookup NU author(s): Dr Rajat Mahapatra
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Low temperature oxidation of gallium nitride epilayer by microwave oxygen plasma treatment has been characterized by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy (XPS). In the initial stage the oxide layer grows almost linearly with time while after approximately a thickness of 10 nm the growth rate saturates. The chemical shift of 1.2 eV in the Ga 2p and 3d peak in XPS data is observed upon oxidation, indicating the formation of Ga2O3 on the GaN surface.
Author(s): Mahapatra R; Pal S; Ray SK; Chakraborty BR; Shivaprasad SM; Lahiri SK; Bose DN
Publication type: Article
Publication status: Published
Journal: Thin Solid Films
Year: 2003
Volume: 425
Issue: 1-2
Pages: 20-23
ISSN (print): 0040-6090
ISSN (electronic): 1879-2731
Publisher: Elsevier SA
URL: http://dx.doi.org/10.1016/S0040-6090(02)01055-6
DOI: 10.1016/S0040-6090(02)01055-6
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