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Mechanisms of B deactivation control by F co-implantation

Lookup NU author(s): Professor Nick Cowern

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Author(s): Cowern NEB, Colombeau B, Benson J, Smith AJ, Lerch W, Paul S, Graf T, Cristiano F, Hebras X, Bolze D

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2005

Volume: 86

Issue: 10

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1870131

DOI: 10.1063/1.1870131

Notes: This paper resolved a lengthy controversy over the mechanisms by which fluorine stabilises boron implantation doping in silicon. As a result industry has clear guidelines on how to optimize the technology - see for example S. Severi et al. in IEEE Electron Device Letters, 28, 198 (2007) and model it in TCAD tools - e.g. V. Moroz et al., Appl. Phys. Lett. 87, 051908 (2005). The paper has stimulated collaboration with 2 other university groups - Bath and Catania, Italy. This has led to two further joint APL publications and membership of the FP7 consortium proposal 'Euringen'. 10 citations (all positive) in the first year of publication.

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