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Lookup NU author(s): Sergej Makovejev,
Dr Sarah Olsen,
Professor Jean-Pierre Raskin
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Pulsed I-V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I-V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.
Author(s): Makovejev S, Olsen SH, Kilchytska V, Raskin JP
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Electron Devices
Print publication date: 01/06/2013
ISSN (print): 0018-9383
ISSN (electronic): 1557-9646
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