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Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers

Lookup NU author(s): Dr Rajat Mahapatra

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Author(s): Maikap S, Lee J-H, Kim D-Y, Mahapatra R, Ray SK, Song J-H, No YS, Choi WK

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology. Part B

Year: 2004

Volume: 22

Issue: 1

Pages: 52-56

ISSN (print): 1071-1023

ISSN (electronic): 0734-211X

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1116/1.1633771

DOI: 10.1116/1.1633771

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