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Improving metal/semiconductor conductivity using AlO_x interlayers on n-type and p-type Si

Lookup NU author(s): Dr Peter King, Dr Erhan Arac, Srinivas Ganti, Dr Kelvin Kwa, Dr Nilhil Ponon, Professor Anthony O'Neill

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Abstract

Thermal atomic layer deposition was used to form ultra-thin interlayers in metal/interlayer/semiconductor Ohmic contacts on n-type and p-type Si. AlOx of thickness 1-2 nm was deposited at 120 degrees C on Si substrates prior to metallization, forming Ni/AlOx/Si contacts. Conductivity improved by two orders of magnitude but the contacts remained rectifying. When they were annealed at 200 degrees C, the conductivity increased by another order of magnitude and the samples became Ohmic. A minimum specific contact resistivity of 1.5 x 10(-4) Omega-cm(2) was obtained for structures based on lightly doped (10(15) cm(-3)) Si substrates. Existing models that describe Fermi level de-pinning do not fully explain our results, which are however consistent with other experimental data in the literature. (C) 2014 AIP Publishing LLC.

Publication metadata

Author(s): King PJ, Arac E, Ganti S, Kwa KSK, Ponon N, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2014

Volume: 105

Issue: 5

Print publication date: 04/08/2014

Online publication date: 04/08/2014

Acceptance date: 22/07/2014

Date deposited: 08/10/2014

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.4892003

DOI: 10.1063/1.4892003

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