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Lookup NU author(s): Professor Anthony O'Neill,
Dr Nilhil Ponon,
Dr Kelvin Kwa
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Effective negative capacitance has been postulated in ferroelectrics because there is hysteresis in plots of polarization-electric field. In future integrated circuits, the incorporation of negative capacitance into MOSFET gate stacks would reduce the sub-threshold slope, enabling low power operation and reduced self-heating. As a step towards meeting this challenge, effective negative capacitance is demonstrated at room temperature in metal-insulator-metal capacitors, where it is stabilized by the presence of a paraelectric material.
Author(s): O'Neill A, Appleby D, Ponon N, Kwa K
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Year of Conference: 2014
Notes: Invited paper at ICSICT 2014, Guilin, China
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