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Lookup NU author(s): Dr Nilhil Ponon, Dan Appleby, Dr Kelvin Kwa, Professor Anthony O'Neill
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
The material properties of thin film polycrystalline Barium titanate (BTO) and Titanium nitride (TiN) are being investigated for use in back-end-of-line (BEOL) and transistor gate stacks. The BTO was deposited by pulsed laser deposition (PLD) and rf-magnetron sputtering with TiN reactively sputtered for top electrodes. Results shows that TiN deposited at room temperature have reasonable quality and show a sheet resistivity of 219 µΩcm. The phase of polycrystalline BTO with grain size around 100 nm is found to be a mixture of cubic and tetragonal, resulting in changes to the expected ferroelectric properties of the thin film. BTO is also found to absorb CO2 from the atmosphere forming a non ferroelectric thin layer of BaCO3.
Author(s): Ponon N, Appleby D, Mojarad SA, Kwa K, O'Neill A
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Intel ERIC
Year of Conference: 2012
Date deposited: 12/12/2014
Sponsor(s): Intel
