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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Lookup NU author(s): Professor Nick Cowern, Dr Chihak Ahn


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A series of B implantation experiments into initially amorphized and not fully recrystallized Si, i.e., into an existing a/c-Si bi-layer material, have been conducted. We varied B dose, energy, and temperature during implantation process itself. Significant B migration has been observed within c-Si part near the a/c-interface and near the end-of-range region before any activation annealing. We propose a general concept of local trapping sites as experimental probes of nanoscale reaction-diffusion processes. Here, the a/c-Si interface acts as a trap, and the process itself is explored as the migration and clustering of mobile BI point defects in nearby c-Si during implantation at temperatures from 77 to 573 K. We find that at room temperature-even at B concentrations as high as 1.6 atomic %, the key B-B pairing step requires diffusion lengths of several nm owing to a small, similar to 0.1 eV, pairing energy barrier. Thus, in nanostructures doped by ion implantation, the implant distribution can be strongly influenced by thermal migration to nearby impurities, defects, and interfaces. (c) 2014 AIP Publishing LLC.

Publication metadata

Author(s): Pawlak BJ, Cowern NEB, Ahn C, Vandervorst W, Gwilliam R, van Berkum JGM

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2014

Volume: 105

Issue: 22

Print publication date: 01/12/2014

Online publication date: 01/12/2014

Acceptance date: 16/11/2014

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics


DOI: 10.1063/1.4902972


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