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Lookup NU author(s): Professor Nick Cowern, Dr Chihak Ahn
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A series of B implantation experiments into initially amorphized and not fully recrystallized Si, i.e., into an existing a/c-Si bi-layer material, have been conducted. We varied B dose, energy, and temperature during implantation process itself. Significant B migration has been observed within c-Si part near the a/c-interface and near the end-of-range region before any activation annealing. We propose a general concept of local trapping sites as experimental probes of nanoscale reaction-diffusion processes. Here, the a/c-Si interface acts as a trap, and the process itself is explored as the migration and clustering of mobile BI point defects in nearby c-Si during implantation at temperatures from 77 to 573 K. We find that at room temperature-even at B concentrations as high as 1.6 atomic %, the key B-B pairing step requires diffusion lengths of several nm owing to a small, similar to 0.1 eV, pairing energy barrier. Thus, in nanostructures doped by ion implantation, the implant distribution can be strongly influenced by thermal migration to nearby impurities, defects, and interfaces. (c) 2014 AIP Publishing LLC.
Author(s): Pawlak BJ, Cowern NEB, Ahn C, Vandervorst W, Gwilliam R, van Berkum JGM
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Year: 2014
Volume: 105
Issue: 22
Print publication date: 01/12/2014
Online publication date: 01/12/2014
Acceptance date: 16/11/2014
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.4902972
DOI: 10.1063/1.4902972
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