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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Lookup NU author(s): Professor Nick Cowern

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Author(s): Pawlak BJ, Surdeanu R, Colombeau B, Smith AJ, Cowern NEB, Lindsay R, Vandervorst W, Brijs B, Richard O, Cristiano F

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2004

Volume: 84

Issue: 12

Pages: 2055-2057

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1682697

DOI: 10.1063/1.1682697

Notes: This paper clarified for the first time the physics of dopant deactivation in ultrashallow preamorphized p-type layers for CMOS technology, and underpins the key developments presented in the 'top-1' paper on F co-implantation. The paper has 32 (positive) citations. The CEC reviewers of the FP5 ARTEMIS project selected the university contribution to this work as a key highlight of the project. This led to Cowern's participation in the €35M FP6 follow-up project PULLNANO on 45-22 nm CMOS technology - the only university group individually selected to join the project in addition to SiNano network members.

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