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Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates

Lookup NU author(s): Dr Enrique Escobedo-Cousin, Dr Peter King, Professor Anthony O'Neill, Dr Alton Horsfall, Professor Jon Goss

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Abstract

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al₂O₃ was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al₂O₃ over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

Publication metadata

Author(s): Hopf T, Vassilevski K, Escobedo-Cousin E, King P, Wright NG, O'Neill AG, Horsfall AB, Goss J, Wells G, Hunt M

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 2015

Volume: 821-823

Pages: 937-940

Print publication date: 30/06/2015

Online publication date: 30/06/2015

Acceptance date: 21/01/2015

ISSN (print): 0255-5476

ISSN (electronic): 1662-9752

Publisher: Scientific.Net

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.937

DOI: 10.4028/www.scientific.net/MSF.821-823.937

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