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4H-SiC Schottky diode arrays for X-ray detection

Lookup NU author(s): Dr Hua Khee Chan, Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Dr Alton Horsfall


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Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20 degrees C to 140 degrees C. The performance at 30 degrees C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2x2 or 1x3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm(2) at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 degrees C. The measured energy resolution (FWHM at 17.4 keV, Mo K alpha) varied from 1.36 to 1.68 keV among different diodes.

Publication metadata

Author(s): Lioliou G, Chan HK, Gohil T, Vassilevski KV, Wright NG, Horsfall AB, Barnett AM

Publication type: Article

Publication status: Published

Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year: 2016

Volume: 840

Pages: 145-152

Print publication date: 21/12/2016

Online publication date: 05/10/2016

Acceptance date: 01/10/2016

ISSN (print): 0168-9002

ISSN (electronic): 1872-9576

Publisher: Elsevier


DOI: 10.1016/j.nima.2016.10.002


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Funder referenceFunder name
University of Sussex
RS130515Royal Society, United Kingdom
ST/M002772/1STFC, United Kingdom
ST/M004635/1STFC, United Kingdom