On electrons mobility in heavily nitrogen doped 4H-SiC

Vasilevskiy, KV; Roy, SK; Wood, N; Horsfall, AB; Wright, NG

doi:10.4028/www.scientific.net/MSF.897.254

On electrons mobility in heavily nitrogen doped 4H-SiC

Lookup NU author(s): Dr Konstantin Vasilevskiy ORCiD, Sandip Roy, Neal Wood, Dr Alton Horsfall, Professor Nick Wright

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Abstract

© 2017 Trans Tech Publications, Switzerland. Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×1018 to 2.3×1019 cm-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.