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On electrons mobility in heavily nitrogen doped 4H-SiC

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Sandip Roy, Neal Wood, Dr Alton Horsfall, Professor Nick Wright


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© 2017 Trans Tech Publications, Switzerland. Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×1018 to 2.3×1019 cm-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.

Publication metadata

Author(s): Vasilevskiy KV, Roy SK, Wood N, Horsfall AB, Wright NG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)

Year of Conference: 2017

Pages: 254-257

Online publication date: 01/05/2017

Acceptance date: 02/04/2016

Date deposited: 16/10/2017

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035710434