Characterisation of 4H-SiC MOS capacitor with a protective coating for harsh environments applications

Roy, SK; Ibanez, JU; O'Neill, AG; Wright, NG; Horsfall, AB

doi:10.4028/www.scientific.net/MSF.897.327

Characterisation of 4H-SiC MOS capacitor with a protective coating for harsh environments applications

Lookup NU author(s): Sandip Roy, Dr Jesus Urresti Ibanez ORCiD, Professor Anthony O'Neill, Professor Nick Wright, Dr Alton Horsfall

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Abstract

© 2017 Trans Tech Publications, Switzerland. Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-κ formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing,has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.