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Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy

Lookup NU author(s): Irina Nikitina

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Author(s): Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2001

Volume: 45

Issue: 2

Pages: 249-253

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/S0038-1101(00)00256-2

DOI: 10.1016/S0038-1101(00)00256-2

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