Toggle Main Menu Toggle Search

Open Access padlockePrints

Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy

Lookup NU author(s): Irina Nikitina


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2001

Volume: 45

Issue: 2

Pages: 249-253

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon


DOI: 10.1016/S0038-1101(00)00256-2


Altmetrics provided by Altmetric