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Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC

Lookup NU author(s): Irina Nikitina

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Abstract

GaN/SiC heterojunctions can improve the performanceconsiderably for BJTs and FETs. In this work,heterojunction diodes have been manufactured and characterized.The fabricated diodes have a GaN n-type cathode region on top ofa 4H-SiC p-type epi layer. The GaN layer was grown with HVPEdirectly on off-axis SiC without a buffer layer. Mesa structureswere formed and a Ti metallization was used as cathode contact toGaN, and the anode contact was deposited on the backside usingsputtered Al. Both current–voltage (I–V) and capacitance–voltage(C–V) measurements were performed on the diode structures. Theideality factor of the measured diodes was 1.1 and was constantwith temperature. A built in potential of 2.06 V was extracted fromI–V-measurements and agrees well with the built in potential fromC–V-measurements. The conduction band offset was extracted to1.1 eV and the heterojunction was of type II. The turn on voltagefor the diodes is about 1 V lower than expected and a suggestedmechanism for this effect is discussed.

Publication metadata

Author(s): Danielsson E, Zetterling C-M, Ostling M, Nikolaev A, Nikitina IP, Dmitriev V

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2001

Volume: 48

Issue: 3

Pages: 444-449

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

URL: http://dx.doi.org/10.1109/16.906434

DOI: 10.1109/16.906434

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