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TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate

Lookup NU author(s): Kazuhiro Adachi, Dr Christopher Johnson

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Publication metadata

Author(s): Adachi K; Johnson CM; Arai K; Fukuda K; Harada S; Shinohe T

Editor(s): Yoshida, S., Nishino, S., Harima, H., Kimoto, T.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials

Year of Conference: 2002

Pages: 1085-1088

ISSN: 0255-5476

Publisher: Trans Tech Publications

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.1085

DOI: 10.4028/www.scientific.net/MSF.389-393.1085

Series Title: Materials Science Forum


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