Kazuhiro Adachi Dr Christopher Johnson
| Elucidation of the intrinsic loss arising from switch output capacitance coss in ultra-high-speed low-loss power converters | 2006 |
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Kazuhiro Adachi Dr Christopher Johnson
| Super-junction device forward characteristics and switched power limitations | 2002 |
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Kazuhiro Adachi Dr Christopher Johnson
| TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate | 2002 |
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Kazuhiro Adachi Dr Christopher Johnson
| TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate | 2002 |
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Kazuhiro Adachi Dr Christopher Johnson
| Comparison of super-junction structures in 4H-SiC and Si for high voltage applications | 2001 |
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Kazuhiro Adachi
| High channel mobility in normally-off 4H-SiC buried channel MOSFETs | 2001 |
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Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al. | Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology | 2001 |
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Kazuhiro Adachi Dr Christopher Johnson
| Comparison of super-junction structures in 4H-SiC and Si for high voltage applications | 2000 |
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Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Kazuhiro Adachi et al. | Implanted bipolar technology in 4H-SiC | 2000 |
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Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al. | Implanted bipolar technology in 4H-SiC | 2000 |
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Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al. | Implanted bipolar technology in 4H-SiC | 2000 |
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Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland Kazuhiro Adachi et al. | Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology | 2000 |
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Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al. | Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology | 2000 |
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Kazuhiro Adachi Dr Christopher Johnson Dr Sylvie Ortolland Professor Anthony O'Neill
| TCAD evaluation of double implanted 4H-SiC power bipolar transistors | 2000 |
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Kazuhiro Adachi Dr Christopher Johnson Dr Sylvie Ortolland Professor Nick Wright Professor Anthony O'Neill et al. | TCAD evaluation of double implanted 4H-SiC power bipolar transistors | 1999 |
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