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Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD

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Author(s): Vassilevski KV; Zekentes K; Rendakova SV; Nikitina IP; Babanin AI; Andreev AN

Publication type: Article

Publication status: Published

Journal: Semiconductors

Year: 1999

Volume: 33

Issue: 11

Pages: 1206-1211

ISSN (print): 1063-7826

ISSN (electronic): 1090-6479

Publisher: MAIK Nauka - Interperiodica

URL: http://dx.doi.org/10.1134/1.1187850

DOI: 10.1134/1.1187850

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