Browse by author
Lookup NU author(s): Professor Nick Cowern
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The strain interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal was modeled by a continuum Green's function method and by atomistic simulation. The interaction energy is proportional to d^−3, where d is separation distance between the defects. The pair interaction energy was found to be less than 0.04 meV for d > 6 nm increasing to more than about 0.1 meV for d < 3 nm. The energies are unlikely to influence the diffusional behavior of the defects except at distances of one or two unit cells. The potential between the point defects is repulsive if they are oriented along the (100) crystal axis, but attractive if they are positioned along (110) or (111).
Author(s): Christmas UME, Faux DA, Cowern NEB
Publication type: Article
Publication status: Published
Journal: Physical Review B: Condensed Matter and Materials Physics
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
Altmetrics provided by Altmetric